An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

Xue, Peng; Hoene, Eckart; Davari, Pooya

doi:10.1049/pel2.12741

An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

Journal Article · Mon Jul 01 00:00:00 EDT 2024 · IET Power Electronics

DOI:https://doi.org/10.1049/pel2.12741· OSTI ID:2439638

^[1]; Hoene, Eckart ^[2]; Davari, Pooya ^[1]

Energy Department Aalborg University Aalborg Denmark
Fraunhofer Institut for Reliability and Microintegration IZM Berlin Germany

Abstract

The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration. This paper presents a design approach for the RC snubber of cascode GaN HEMTs to achieve the optimized noise‐loss trade‐off. At first, an analytical model is proposed to describe the instability of cascode GaN HEMTs‐based test circuits utilizing RC snubber. Based on the model, an analytical approach is proposed to achieve two optimum RC snubber designs S1 and S2. The design S1 can satisfactorily dampen the oscillation with minimum switching losses. The design S2 achieves maximum effective damping on the oscillation at a minimized cost of additional power losses. In the end, the accuracy of the proposed model is validated by the double‐pulse test and good agreement is obtained.

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Sponsoring Organization:: USDOE

OSTI ID:: 2439638

Alternate ID(s):: OSTI ID: 2513566

Journal Information:: IET Power Electronics, Journal Name: IET Power Electronics Journal Issue: 12 Vol. 17; ISSN 1755-4535

Publisher:: Institution of Engineering and Technology (IET)Copyright Statement

Country of Publication:: United Kingdom

Language:: English

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