Single particle-induced latchup
Journal Article
·
· IEEE Transactions on Nuclear Science
- Univ. Montpellier II (France). Centre d`Electronique de Montpellier
This paper presents an up-to-date overview of the single-event latchup (SEL) hard failure mode encountered in electronic device applications involving heavy ion environment. This phenomenon is specific to CMOS technology. Single-event latchup is discussed after a short description of the effects induced by the interaction of a heavy ion with silicon. Understanding these effects is necessary to understand the different failures. This paper includes a description of the latchup phenomenon and the different triggering modes, reviews of models and hardening solutions, and finally presents new developments in simulation approaches.
- OSTI ID:
- 242432
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 43, Issue 2; Other Information: PBD: Apr 1996
- Country of Publication:
- United States
- Language:
- English
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