Pure spin current injection of single-layer monochalcogenides

Mendoza, Bernardo S.; Grillo, Simone; Juárez-Reyes, Lucila; Fregoso, Benjamin M.

doi:10.1088/2053-1591/acbf99

Pure spin current injection of single-layer monochalcogenides

Journal Article · Tue Mar 07 00:00:00 EST 2023 · Materials Research Express (Online)

DOI:https://doi.org/10.1088/2053-1591/acbf99· OSTI ID:2423064

^[1]; Grillo, Simone ^[2]; Juárez-Reyes, Lucila ^[1]; ^[3]

Centro de Investigaciones en Óptica (CIO), León (Mexico)
Tor Vergata Univ. of Rome (Italy); National Inst. of Nuclear Physics (INFN), Rome (Italy)
Kent State Univ., Kent, OH (United States)

We compute the spectrum of pure spin current injection in ferroelectric single-layer SnS, SnSe, GeS, and GeSe. The formalism takes into account the coherent spin dynamics of optically excited conduction states split in energy by spin–orbit coupling. The velocity of the electron's spins is calculated as a function of incoming photon energy and angle of linearly polarized light within a full electronic band structure scheme using density functional theory. We find peak speeds of 520, 360, 270 and 370 Km s^-1 for SnS, SnSe, GeS and GeSe, respectively which are an order of magnitude larger than those found in bulk semiconductors, e.g., GaAs and CdSe. Interestingly, the spin velocity is almost independent of the direction of polarization of light in a range of photon energies. Our results demonstrate that single-layer SnS, SnSe, GeS and GeSe are candidates to produce on demand spin-current in spintronics applications.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)

Sponsoring Organization:: Consejo Nacional de Humanidades, Ciencias, y Tecnologías (CONACyT); National Science Foundation (NSF); USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 2423064

Journal Information:: Materials Research Express (Online), Journal Name: Materials Research Express (Online) Journal Issue: 3 Vol. 10; ISSN 2053-1591

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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