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Injection current in ferroelectric group-IV monochalcogenide monolayers

Journal Article · · Physical Review. B
 [1];  [2];  [3];  [4]
  1. Kent State Univ., Kent, OH (United States); University of Arkansas
  2. Univ. of Arkansas, Fayetteville, AR (United States)
  3. Univ. of California, Berkeley, CA (United States)
  4. Kent State Univ., Kent, OH (United States)
We study the injection current response tensor (also known as circular photogalvanic effect or ballistic current) in ferrolectric monolayer GeS, GeSe, SnS, and SnSe. We find that the injection current is perpendicular to the spontaneous in-plane polarization and could reach peak (bulk) values of the order of 1010 AV–2s–1 in the visible spectrum. The magnitude of the injection current is the largest reported in the literature to date for a two dimensional material. To rationalize the large injection current, we correlate the injection current spectrum with the joint density of states, electric polarization, strain, etc. We find that various factors such as anisotropy, in-plane polarization and wave function delocalization are important in determining the injection current tensor in these materials. Here, we also find that compression along the polar axis can increase the injection current (or change its sign), and hence strain can be an effective control knob for their nonlinear optical response. Conversely, the injection current can be a sensitive probe of the crystal structure.
Research Organization:
Univ. of Arkansas, Fayetteville, AR (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231; SC0016139
OSTI ID:
1763378
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 19 Vol. 100; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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