Direct Imaging of Antiferromagnet-Ferromagnet Phase Transition in van der Waals Antiferromagnet CrSBr

Yu, Jingjing; Liu, Daxiang; Ding, Zhenyu; Yuan, Yanan; Zhou, Jiayuan; Pei, Fangfang; Pan, Haolin; Ma, Tianping; Jin, Feng; Wang, Lingfei; Zhu, Wenguang; Wang, Shouguo; Wu, Yizheng; Liu, Xue; Hou, Dazhi; Gao, Yang; Qiu, Ziqiang; Yang, Mengmeng; Li, Qian

doi:10.1002/adfm.202307259

Direct Imaging of Antiferromagnet-Ferromagnet Phase Transition in van der Waals Antiferromagnet CrSBr

Journal Article · Thu Sep 28 00:00:00 EDT 2023 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.202307259· OSTI ID:2422585

Yu, Jingjing ^[1]; Liu, Daxiang ^[2]; Ding, Zhenyu ^[2]; Yuan, Yanan ^[2]; Zhou, Jiayuan ^[1]; Pei, Fangfang ^[2]; Pan, Haolin ^[2]; Ma, Tianping ^[1]; Jin, Feng ^[2]; Wang, Lingfei ^[2]; Zhu, Wenguang ^[2]; Wang, Shouguo ^[1]; Wu, Yizheng ^[3]; Liu, Xue ^[1]; Hou, Dazhi ^[2]; Gao, Yang ^[2]; Qiu, Ziqiang ^[4]; Yang, Mengmeng ^[1]; ^[2]

Anhui University (China)
University of Science and Technology of China, Hefei, Anhui (China)
Fudan University, Shanghai (China)
University of California, Berkeley, CA (United States)

The advent of van der Waals (vdW) ferromagnetic (FM) and antiferromagnetic (AFM) materials offers unprecedented opportunities for spintronics and magneto-optic devices. Combining magnetic Kerr microscopy and density functional theory calculations, the AFM-FM transition is investigated and a surprising abnormal magneto-optic anisotropy in vdW CrSBr associated with different magnetic phases (FM, AFM, or paramagnetic state) is discovered. This unique magneto-optic property leads to different anisotropic optical reflectivity from different magnetic states, permitting direct imaging of the AFM Néel vector orientation and the dynamic process of the AFM-FM transition within a magnetic field. Using Kerr microscopy, not only the domain nucleation and propagation process is imaged but also the intermediate spin-flop state in the AFM-FM transition is identified. In conclusion, the unique magneto-optic property and clear identification of the dynamics process of the AFM-FM phase transition in CrSBr demonstrate the promise of vdW magnetic materials for future spintronic technology.

View Accepted Manuscript (DOE)

Research Organization:: University of California, Berkeley, CA (United States)

Sponsoring Organization:: Fundamental Research Funds for the Central Universities; King Abdullah University of Science and Technology (KAUST); National Key R&D Program of China; National Natural Science Foundation of China; National Research Foundation of Korea; Open Funds of Hefei National Research Center for Physical Sciences at the Microscale; Science Research Center Program through the National Research Foundation of Korea; Strategic Priority Research Program of Chinese Academy of Sciences; USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USTC Research Funds of the Double First-Class Initiative; Users with Excellence Program of Hefei Science Center CAS; van der Waals heterostructures program

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 2422585

Alternate ID(s):: OSTI ID: 2007087

Journal Information:: Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 2 Vol. 34; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

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36 MATERIALS SCIENCE
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antiferromagnet-ferromagnet phase transition
direct imaging of AFM Néel vector orientation
magnetooptic anisotropy
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Direct Imaging of Antiferromagnet-Ferromagnet Phase Transition in van der Waals Antiferromagnet CrSBr

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