Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

Telford, Evan J.; Dismukes, Avalon H.; Lee, Kihong; Cheng, Minghao; Wieteska, Andrew; Bartholomew, Amymarie K.; Chen, Yu‐Sheng; Xu, Xiaodong; Pasupathy, Abhay N.; Zhu, Xiaoyang; Dean, Cory R.; Roy, Xavier

doi:10.1002/adma.202003240

Title: Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

Journal Article · Sun Aug 09 00:00:00 EDT 2020 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202003240· OSTI ID:1803831

Telford, Evan J. ^[1];

^[1]; Lee, Kihong ^[1]; Cheng, Minghao ^[1]; Wieteska, Andrew ^[1]; Bartholomew, Amymarie K. ^[1]; Chen, Yu‐Sheng ^[2]; Xu, Xiaodong ^[3]; Pasupathy, Abhay N. ^[1]; Zhu, Xiaoyang ^[1]; Dean, Cory R. ^[1];

^[1]

Columbia Univ., New York, NY (United States)
Univ. of Chicago, IL (United States)
Univ. of Washington, Seattle, WA (United States)

Abstract The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here the magnetic and electronic properties of CrSBr are reported, an air‐stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, T _N = 132 ± 1 K, CrSBr adopts an A‐type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is Δ _E = 1.5 ± 0.2 eV with a corresponding PL peak centered at 1.25 ± 0.07 eV. Using magnetotransport measurements, strong coupling between magnetic order and transport properties in CrSBr is demonstrated, leading to a large negative magnetoresistance response that is unique among vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin‐based electronics.

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Research Organization:: Columbia Univ., New York, NY (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: SC0019443; AC02-06CH11357; DGE 16-44869; CHE-1834750; DE‐AC02‐06CH11357

OSTI ID:: 1803831

Alternate ID(s):: OSTI ID: 1646923

Journal Information:: Advanced Materials, Vol. 32, Issue 37; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 71 works

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CSD 2006676: Experimental Crystal Structure Determination J., Telford, Evan; H., Dismukes, Avalon; Kihong, Lee, https://doi.org/10.25505/fiz.icsd.cc25c3h5 The current record is supplemented by this dataset	dataset	January 2021
CSD 2006677: Experimental Crystal Structure Determination J., Telford, Evan; H., Dismukes, Avalon; Kihong, Lee, https://doi.org/10.25505/fiz.icsd.cc25c3j6 The current record is supplemented by this dataset	dataset	January 2021
CSD 2006678: Experimental Crystal Structure Determination J., Telford, Evan; H., Dismukes, Avalon; Kihong, Lee, https://doi.org/10.25505/fiz.icsd.cc25c3k7 The current record is supplemented by this dataset	dataset	January 2021
CSD 2006679: Experimental Crystal Structure Determination J., Telford, Evan; H., Dismukes, Avalon; Kihong, Lee, https://doi.org/10.25505/fiz.icsd.cc25c3l8 The current record is supplemented by this dataset	dataset	January 2021

Title: Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

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