Topological quantum devices: a review

Jin, Kyung-Hwan; Jiang, Wei; Sethi, Gurjyot; Liu, Feng

doi:10.1039/d3nr01288c

Topological quantum devices: a review

Journal Article · Mon Jul 17 00:00:00 EDT 2023 · Nanoscale

DOI:https://doi.org/10.1039/d3nr01288c· OSTI ID:2419018

^[1]; ^[2]; Sethi, Gurjyot ^[3]; Liu, Feng ^[3]

Institute for Basic Science, Pohang (Korea, Republic of). Center for Artificial Low Dimensional Electronic Systems; OSTI
Beijing Institute of Technology (China)
Univ. of Utah, Salt Lake City, UT (United States)

The introduction of the concept of topology into condensed matter physics has greatly deepened our fundamental understanding of transport properties of electrons as well as all other forms of quasi particles in solid materials. It has also fostered a paradigm shift from conventional electronic/optoelectronic devices to novel quantum devices based on topology-enabled quantum device functionalities that transfer energy and information with unprecedented precision, robustness, and efficiency. In this article, the recent research progress in topological quantum devices is reviewed. We first outline the topological spintronic devices underlined by the spin-momentum locking property of topology. We then highlight the topological electronic devices based on quantized electron and dissipationless spin conductivity protected by topology. Finally, we discuss quantum optoelectronic devices with topology-redefined photoexcitation and emission. The field of topological quantum devices is only in its infancy, we envision many significant advances in the near future.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Utah, Salt Lake City, UT (United States)

Sponsoring Organization:: Institute for Basic Science; National Natural Science Foundation of China (NSFC); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02-04ER46148

OSTI ID:: 2419018

Alternate ID(s):: OSTI ID: 1992388

Journal Information:: Nanoscale, Journal Name: Nanoscale Journal Issue: 31 Vol. 15; ISSN NANOHL; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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