Exploring the Dirac nature of RbBi 2
Journal Article
·
· Physical Review. B
- Univ. of Virginia, Charlottesville, VA (United States); OSTI
- Univ. of Virginia, Charlottesville, VA (United States)
Characteristics of topological semimetals such as a nonsaturating magnetoresistance (MR), a field-induced metal to semiconducting crossover and a robust resistivity plateau are observed under a magnetic field in type-I RbBi2 bulk superconductor with $$\mathrm{T}$$c = 4.15 K. The MR exhibits a notable 3500% increase at 2 K and 9 T and the resistivity follows a power law temperature dependence, while the MR ∝ $$\mathrm{H}$$1.26, indicating weak carrier compensation. Further, first principles calculations provided insights into the dynamical stability of the cubic structure at 0 K. Both hole and electron pockets are observed at the Fermi surface. The electron-phonon interaction constant indicates weak coupling strength (<1) that leads to a maximum predicted $$\mathrm{T}$$c of 2.852 K. Just below the Fermi level, EF, the electronic band structure consists of linear band crossings at the $$\mathrm{X}$$ points in the Brillouin zone (BZ) corresponding to massless, symmetry-protected Dirac fermions.
- Research Organization:
- Univ. of Virginia, Charlottesville, VA (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE Office of Science (SC)
- Grant/Contract Number:
- FG02-01ER45927
- OSTI ID:
- 2418947
- Journal Information:
- Physical Review. B, Journal Name: Physical Review. B Journal Issue: 3 Vol. 107; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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