Degradation behavior of CIGS solar Cells: A parametric analysis

Jahandardoost, Mohsen; Walkons, Curtis; Bansal, Shubhra

doi:10.1016/j.solener.2023.05.052

Degradation behavior of CIGS solar Cells: A parametric analysis

Journal Article · Fri Jun 09 00:00:00 EDT 2023 · Solar Energy

DOI:https://doi.org/10.1016/j.solener.2023.05.052· OSTI ID:2418532

^[1]; Walkons, Curtis ^[2]; ^[3]

Univ. of Nevada, Reno, NV (United States); OSTI
Univ. of Nevada, Reno, NV (United States)
Univ. of Nevada, Reno, NV (United States); Purdue Univ., West Lafayette, IN (United States)

A parametric study of the effect of bulk and interface properties on device characteristics as a function of heat and light stress under open-circuit and short-circuit conditions is developed for Cu(In,Ga)(S,Se)₂ solar cells using SCAPS-1D simulator. The variables and interdependencies modeled include: (1) conduction band offset (CBO) between buffer and absorber; (2) buffer ionized donor density; (3) CIGS shallow acceptor density; (4) CIGS deep acceptor density; (5) CIGS shallow donor density; (6) ionized acceptor concentration in the ordered vacancy compound (OVC) CIGS/buffer interface; and (7) back contact work-function. An increase in absorber shallow acceptor or a decrease in shallow donor density results in an increase in net carrier density and open-circuit voltage (V_OC). Further, a decrease in V_OC is observed with an increase in the deep acceptors or neutral midgap defects in the CIGS due to higher charge carrier recombination. A change of CBO from spike to cliff condition is a dominant mechanism of decreasing VOC with an interface defect density of 10¹² cm^-2. The minimum depletion width is found to be specifically sensitive to CBO and interface defect density. An inflection in the capacitance–voltage curves (in reverse bias) is observed with simultaneous increase in bulk deep acceptor density and shallow donor density near the back contact.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Nevada, Reno, NV (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0007750

OSTI ID:: 2418532

Journal Information:: Solar Energy, Journal Name: Solar Energy Journal Issue: C Vol. 260; ISSN 0038-092X

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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