A parametric study of the effect of bulk and interface properties on device characteristics as a function of heat and light stress under open-circuit and short-circuit conditions is developed for Cu(In,Ga)(S,Se)2 solar cells using SCAPS-1D simulator. The variables and interdependencies modeled include: (1) conduction band offset (CBO) between buffer and absorber; (2) buffer ionized donor density; (3) CIGS shallow acceptor density; (4) CIGS deep acceptor density; (5) CIGS shallow donor density; (6) ionized acceptor concentration in the ordered vacancy compound (OVC) CIGS/buffer interface; and (7) back contact work-function. An increase in absorber shallow acceptor or a decrease in shallow donor density results in an increase in net carrier density and open-circuit voltage (VOC). Further, a decrease in VOC is observed with an increase in the deep acceptors or neutral midgap defects in the CIGS due to higher charge carrier recombination. A change of CBO from spike to cliff condition is a dominant mechanism of decreasing VOC with an interface defect density of 1012 cm-2. The minimum depletion width is found to be specifically sensitive to CBO and interface defect density. An inflection in the capacitance–voltage curves (in reverse bias) is observed with simultaneous increase in bulk deep acceptor density and shallow donor density near the back contact.
Jahandardoost, Mohsen, et al. "Degradation behavior of CIGS solar Cells: A parametric analysis." Solar Energy, vol. 260, no. C, Jun. 2023. https://doi.org/10.1016/j.solener.2023.05.052
Jahandardoost, Mohsen, Walkons, Curtis, and Bansal, Shubhra, "Degradation behavior of CIGS solar Cells: A parametric analysis," Solar Energy 260, no. C (2023), https://doi.org/10.1016/j.solener.2023.05.052
@article{osti_2418532,
author = {Jahandardoost, Mohsen and Walkons, Curtis and Bansal, Shubhra},
title = {Degradation behavior of CIGS solar Cells: A parametric analysis},
annote = {A parametric study of the effect of bulk and interface properties on device characteristics as a function of heat and light stress under open-circuit and short-circuit conditions is developed for Cu(In,Ga)(S,Se)2 solar cells using SCAPS-1D simulator. The variables and interdependencies modeled include: (1) conduction band offset (CBO) between buffer and absorber; (2) buffer ionized donor density; (3) CIGS shallow acceptor density; (4) CIGS deep acceptor density; (5) CIGS shallow donor density; (6) ionized acceptor concentration in the ordered vacancy compound (OVC) CIGS/buffer interface; and (7) back contact work-function. An increase in absorber shallow acceptor or a decrease in shallow donor density results in an increase in net carrier density and open-circuit voltage (VOC). Further, a decrease in VOC is observed with an increase in the deep acceptors or neutral midgap defects in the CIGS due to higher charge carrier recombination. A change of CBO from spike to cliff condition is a dominant mechanism of decreasing VOC with an interface defect density of 1012 cm-2. The minimum depletion width is found to be specifically sensitive to CBO and interface defect density. An inflection in the capacitance–voltage curves (in reverse bias) is observed with simultaneous increase in bulk deep acceptor density and shallow donor density near the back contact.},
doi = {10.1016/j.solener.2023.05.052},
url = {https://www.osti.gov/biblio/2418532},
journal = {Solar Energy},
issn = {ISSN 0038-092X},
number = {C},
volume = {260},
place = {United States},
publisher = {Elsevier},
year = {2023},
month = {06}}
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)https://doi.org/10.1109/PVSC.2018.8548167