Voltage-Induced Charge Redistribution in Cu(In,Ga)Se₂ Devices Studied With High-Speed Capacitance–Voltage Profiling

Journal Article · Mon Dec 03 00:00:00 EST 2018 · IEEE Journal of Photovoltaics

DOI:https://doi.org/10.1109/JPHOTOV.2018.2882204· OSTI ID:1489187

Bailey, Jeff ^[1]; Poplavskyy, Dmitry ^[1]; Zapalac, Geordie ^[1]; Mansfield, Lorelle M. ^[2]; Shafarman, William ^[3]

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1. MiaSole Hi-Tech Corp., Santa Clara, CA (United States)
2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
3. Univ. of Delaware, Newark, DE (United States)

Devices made from Cu(In, Ga)Se₂ (CIGS) solar cell material have been evaluated with high-speed capacitance-voltage profiling after stepwise voltage changes. The changes primarily affect near-interface charge at deep acceptors within the CIGS absorber layer and generate temperature-dependent capacitance changes observed in deep-level transient spectroscopy measurements. SCAPS device modeling indicates that the deep acceptor concentration is up to the two orders of magnitude higher than the shallow doping level. High deep acceptor concentrations are found in all materials studied here. In conclusion, the large deep defect levels are high enough to limit minority carrier lifetime and cell efficiency.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Delaware, Newark, DE (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• Grant/Contract Number: AC36-08GO28308; EE0007542
• OSTI ID: 1489187
• Alternate ID(s): OSTI ID: 1780935
• Report Number(s): NREL/JA--5K00-73004
• Journal Information: IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 1 Vol. 9; ISSN 2156-3381
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CuInxGa1-xSe2 (CIGS)
capacitance methods
solar cells