Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics

Meng, Kui; Li, Zeya; Chen, Peng; Ma, Xingyue; Huang, Junwei; Li, Jiayi; Qin, Feng; Qiu, Caiyu; Zhang, Yilin; Zhang, Ding; Deng, Yu; Yang, Yurong; Gu, Genda; Hwang, Harold Y.; Xue, Qi-Kun; Cui, Yi; Yuan, Hongtao

doi:10.1038/s41565-024-01675-5

Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics

Journal Article · Wed May 15 00:00:00 EDT 2024 · Nature Nanotechnology

DOI:https://doi.org/10.1038/s41565-024-01675-5· OSTI ID:2405173

Meng, Kui ^[1]; ^[2]; Chen, Peng ^[2]; ^[2]; ^[2]; ^[2]; ^[2]; Qiu, Caiyu ^[2]; Zhang, Yilin ^[2]; ^[3]; Deng, Yu ^[2]; ^[2]; ^[4]; ^[5]; ^[6]; ^[5]; ^[2]

Nanjing Univ. (China); SLAC
Nanjing Univ. (China)
Tsinghua Univ., Beijing (China)
Brookhaven National Laboratory (BNL), Upton, NY (United States)
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Stanford Univ., CA (United States)
Tsinghua Univ., Beijing (China); Southern University of Science and Technology (SUSTech), Shenzhen (China)

Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm^-2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS₂ transistors exhibiting high on/off current ratios over 10⁸, ultralow subthreshold swing of 65 mV dec^-1 and ultralow leakage current density of ~10^-6 A cm^-2. Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor–insulator transition at the clean-limit Bi₂Sr₂CaCu₂O_8+δ can also be realized through fluoride gating. In conclusion, our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: National Key R&D Program of China; National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: AC02-76SF00515; SC0012704

OSTI ID:: 2405173

Alternate ID(s):: OSTI ID: 2406889

Report Number(s):: BNL--225833-2024-JAAM

Journal Information:: Nature Nanotechnology, Journal Name: Nature Nanotechnology Vol. 19; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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