Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

Journal Article · Sun Oct 01 04:00:00 EDT 1995 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.1146121· OSTI ID:240477

Castoldi, A; Rehak, P ^[1]

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1. Brookhaven National Laboratory, Upton, New York 11973 (United States)

This paper presents a precise absolute measurement of the drift velocity and mobility of electrons in high resistivity silicon at room temperature. The electron velocity is obtained from the differential measurement of the drift time of an electron cloud in a silicon drift detector. The main features of the transport scheme of this class of detectors are: the high uniformity of the electron motion, the transport of the signal electrons entirely contained in the high-purity bulk, the low noise timing due to the very small anode capacitance (typical value 100 fF), and the possibility to measure different drift distances, up to the wafer diameter, in the same semiconductor sample. These features make the silicon drift detector an optimal device for high precision measurements of carrier drift properties. The electron drift velocity and mobility in a 10 k{Omega} cm NTD {ital n}-type silicon wafer have been measured as a function of the electric field in the range of possible operation of a typical drift detector (167--633 V/cm). The electron ohmic mobility is found to be 1394 cm{sup 2}/V s. The measurement precision is better than 1%. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Brookhaven National Laboratory
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 240477
• Journal Information: Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 10 Vol. 66; ISSN RSINAK; ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ACCURACY
AMBIENT TEMPERATURE
ELECTRON DRIFT
ELECTRON MOBILITY
MEASURING METHODS
SI SEMICONDUCTOR DETECTORS