Field emitter array mask patterning using laser interference lithography

Journal Article · Fri Sep 01 04:00:00 EDT 1995 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.588117· OSTI ID:240462

Spallas, J P; Hawryluk, A M; Kania, D R ^[1]

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1. Lawrence Livermore National Laboratory, University of California, Livermore, California 94550 (United States)

We have fabricated uniform arrays of 120-nm-diam dot masks on 300 nm centers using laser interference lithography. Chrome, cobalt, nickel, and germanium dot arrays have been fabricated. The density of these arrays is {gt}10{sup 9} dots/cm{sup 2}. The standard deviation of the average dot diameter is 7.4% over a 5-cm-diam silicon substrate. The center-to-center spacing of the dot mask is determined by the laser wavelength and interference angle. Some control over the dot diameter is possible by varying the angle of the substrate during the metal deposition prior to liftoff. We have used a reactive ion etch with these metal dot masks to form single crystal silicon pedestals demonstrating that these structures are suitable for self-aligned gated field emitter array fabrication. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}

• Research Organization: Lawrence Livermore National Laboratory
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 240462
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 5 Vol. 13; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHROMIUM
COBALT
DEPOSITION
ELECTRODES
ETCHING
FIELD EMISSION
GERMANIUM
LASER RADIATION
MASKING
NICKEL