Even–Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Chen, Bo; Liu, Xiaoda; Li, Yuhang; Tay, Han; Taniguchi, Takashi; Watanabe, Kenji; Chan, Moses H. W.; Yan, Jiaqiang; Song, Fengqi; Cheng, Ran; Chang, Cui-Zu

doi:10.1021/acs.nanolett.4c01597

Even–Odd Layer-Dependent Exchange Bias Effect in MnBi₂Te₄ Chern Insulator Devices

Journal Article · Thu Jun 27 00:00:00 EDT 2024 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.4c01597· OSTI ID:2397382

Chen, Bo ^[1]; Liu, Xiaoda ^[2]; Li, Yuhang ^[3]; Tay, Han ^[2]; ^[4]; ^[4]; Chan, Moses H. W. ^[2]; ^[5]; ^[6]; ^[7]; ^[2]

Pennsylvania State Univ., University Park, PA (United States); Nanjing Univ. (China)
Pennsylvania State Univ., University Park, PA (United States)
Nankai Univ., Tianjin (China); Univ. of California, Riverside, CA (United States)
National Institute for Materials Science (NIMS), Tsukuba (Japan)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Nanjing Univ. (China)
Univ. of California, Riverside, CA (United States)

Magnetic topological materials with coexisting magnetism and nontrivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi₂Te₄ show fascinating even–odd layer-dependent physics. Here, in this work, we fabricate a series of thin-flake MnBi₂Te₄ devices using stencil masks and observe the Chern insulator state at high magnetic fields. Upon magnetic field training, a large exchange bias effect is observed in odd but not in even septuple layer (SL) devices. Through theoretical calculations, we attribute the even–odd layer-dependent exchange bias effect to the contrasting surface and bulk magnetic properties of MnBi₂Te₄ devices. Our findings reveal the microscopic magnetic configuration of MnBi₂Te₄ thin flakes and highlight the challenges in replicating the zero magnetic field quantum anomalous Hall effect in odd SL MnBi₂Te₄ devices.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 2397382

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 27 Vol. 24; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Chern insulator
antiferromagnetism
exchange bias effect
intrinsic magnetic topological insulator
stencil mask

Even–Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

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References (48)

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Even–Odd Layer-Dependent Exchange Bias Effect in MnBi₂Te₄ Chern Insulator Devices