Recent progress of MnBi2Te4 epitaxial thin films as a platform for realising the quantum anomalous Hall effect

Li, Qile; Mo, Sung-Kwan; Edmonds, Mark T.

doi:10.1039/d4nr00194j

Recent progress of MnBi₂Te₄ epitaxial thin films as a platform for realising the quantum anomalous Hall effect

Journal Article · Tue Jul 02 00:00:00 EDT 2024 · Nanoscale

DOI:https://doi.org/10.1039/d4nr00194j· OSTI ID:2462727

Li, Qile ^[1]; ^[2]; Edmonds, Mark T. ^[3]

Monash Univ., Clayton, VIC (Australia)
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Monash Univ., Clayton, VIC (Australia); Melbourne Centre for Nanofabrication, Clayton, VIC (Australia)

Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic-doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi₂Te₄ has the potential to eliminate or significantly reduce magnetic disorder and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi₂Te₄ thin films at zero magnetic field, and what leads to the difficulty in quantisation is still an active research area. Although bulk MnBi₂Te₄ and exfoliated flakes have been well studied, revealing both the QAHE and axion insulator phases, experimental progress on MBE thin films has been slower. Furthermore, understanding how the breakdown of the QAHE occurs in MnBi₂Te₄ thin films and finding solutions that will enable mass-produced millimetre-size QAHE devices operating at elevated temperatures are required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi₂Te₄ thin films and discuss mechanisms that could explain the failure of the QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising the QAHE at elevated temperatures in MnBi₂Te₄ thin films.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 2462727

Alternate ID(s):: OSTI ID: 2403596

Journal Information:: Nanoscale, Journal Name: Nanoscale Journal Issue: 30 Vol. 16; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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