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Inkjet-printed Ce-doped SnO x electron transport layer for improved performance of planar perovskite solar cells

Journal Article · · Materials Advances
DOI:https://doi.org/10.1039/D4MA00094C· OSTI ID:2396368
 [1];  [2];  [3];  [3];  [2];  [1]
  1. Department of Materials Science and Engineering, KTH Royal Institute of Technology, 10044 Stockholm, Sweden
  2. Department of Chemistry, Applied Physical Chemistry, KTH Royal Institute of Technology, 10044 Stockholm, Sweden
  3. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

Inkjet-printed Ce-doped SnO x ETLs achieved improved photovoltaic performance originating from the increased conductivity, suppressed surface defects, and improved energy level alignment at the ETL/perovskite interface, compared to undoped SnO x ETLs.

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
2396368
Journal Information:
Materials Advances, Journal Name: Materials Advances Journal Issue: 15 Vol. 5; ISSN MAADC9; ISSN 2633-5409
Publisher:
Royal Society of Chemistry (RSC)Copyright Statement
Country of Publication:
United Kingdom
Language:
English

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