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Suppression of metal-to-insulator transition and stabilization of superconductivity by pressure in Re3 Ge7

Journal Article · · Physical Review. B
The effect of pressure on the low-temperature states of the Re3⁡Ge7 is investigated by both electrical and Hall resistance and magnetization measurements. At ambient pressure, the temperature-dependent resistance of Re3⁡Ge7 behaves quasilinearly from room temperature down to 60 K, then undergoes a two-step metal-to-insulator transition (MIT) at temperatures T1=59.4K and T2=58.7K, which may be related to a structural phase transition or occurrence of charge-density wave ordering. Upon applying pressure, the two-step (T1,T2) MIT splits into three steps (T1,T2. and T3) above 1 GPa, and all traces of MITs are fully suppressed by ~8 GPa. Subsequently, the onset of bulk superconductivity (SC) occurs between 10.8 and 12.2 GPa and persists to our highest pressure of 26.8 GPa. At 12.2 GPa the superconducting transition temperature, Tc, and upper critical field, Hc⁢2 reach the maximum of Tc (onset) ~5.9 K and Hc⁢2 (1.8 K) ~14 kOe. Finally, our results not only present the observation of SC under high pressure in Re3⁡Ge7 but also delineate the interplay between SC and other competing electronic states by creating a T-p phase diagram for this potentially topologically nontrivial system Re3⁡Ge7.
Research Organization:
Ames Laboratory (AMES), Ames, IA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Advancement of Topological Semimetals (CATS)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
AC02-07CH11358; SC0023648
OSTI ID:
2382786
Alternate ID(s):
OSTI ID: 2356996
Report Number(s):
IS-J--11,348
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 17 Vol. 109; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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