Creation of color centers in diamond by recoil implantation through dielectric films

Han, Yuyang; Pederson, Christian; Matthews, Bethany E.; Yama, Nicholas S.; Parsons, Maxwell F.; Fu, Kai-Mei C.

doi:10.1063/5.0183421

Creation of color centers in diamond by recoil implantation through dielectric films

Journal Article · Wed Jan 24 00:00:00 EST 2024 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0183421· OSTI ID:2377154

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Univ. of Washington, Seattle, WA (United States)
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
Univ. of Washington, Seattle, WA (United States); Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

The need of near-surface color centers in diamond for quantum technologies motivates the controlled doping of specific extrinsic impurities into the crystal lattice. Further, recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as “recoil implantation.” Here, we extend this technique to incorporate dielectric precursors for creating nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond. Specifically, we demonstrate that gallium focused-ion-beam exposure to a thin layer of silicon nitride or silicon dioxide on the diamond surface results in the introduction of both extrinsic impurities and carbon vacancies. These defects subsequently give rise to near-surface NV and SiV centers with desirable properties after annealing.

View Accepted Manuscript (DOE)

Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC)

Grant/Contract Number:: AC05-76RL01830; SC0012704

OSTI ID:: 2377154

Report Number(s):: PNNL-SA--191718

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 124; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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