A Multi-Metrics In Situ Aging Detector for SiC Power MOSFET Modules with Full Driver-Integration Capability

Zhao, Shuofeng; Khan, Faisal

doi:10.1109/APEC48139.2024.10509184

A Multi-Metrics In Situ Aging Detector for SiC Power MOSFET Modules with Full Driver-Integration Capability

Conference · Thu May 02 04:00:00 EDT 2024

DOI:https://doi.org/10.1109/APEC48139.2024.10509184· OSTI ID:2368583

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In this paper, the concept and prototype of an aging detector for silicon carbide (SiC) power metal oxide semiconductor field effect transistor (MOSFET) are proposed and described. It leverages the resonant peak values of gate-source voltage at different instants during the switching transients to decode the change of multiple aging indicators, such as the increases of on-state resistance and threshold voltage. Modeling-based analysis is conducted to support the idea. The detector can be fully integrated into gate drivers without any additional connection to the power stage and is functional during normal power stage operation. A prototype unit was built, and preliminary tests were conducted to validate the idea and the practicality of the detector.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Transportation Office. Vehicle Technologies Office

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 2368583

Report Number(s):: NREL/CP-5400-87929; MainId:88704; UUID:1a53c39d-d134-45d6-baa8-5e2cc7cdc0c0; MainAdminId:72695

Country of Publication:: United States

Language:: English

References (11)

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Related Subjects

ENGINEERING
MATERIALS SCIENCE
MOSFET
aging
detection
silicon carbide

A Multi-Metrics In Situ Aging Detector for SiC Power MOSFET Modules with Full Driver-Integration Capability

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References (11)

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