A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

Garcia, Jorge; Saeed, Sarah; Gurpinar, Emre; Castellazzi, Alberto

doi:10.3390/electronics10020159

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

Journal Article · Wed Jan 13 00:00:00 EST 2021 · Electronics

DOI:https://doi.org/10.3390/electronics10020159· OSTI ID:1764460

^[1]; Saeed, Sarah ^[1]; ^[2]; Castellazzi, Alberto ^[3]

Univ. of Oviedo, Gijon (Spain)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Kyoto Univ. of Advanced Science (Japan). SP2-Lab.

This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing for theoretical higher power density values in the final system. The principle of operation of the different solutions is discussed, and then the main relevant implementation details are presented. After that, the operation of the circuits is demonstrated experimentally, by testing a set of prototypes of these drivers. This provides a comprehensive design example that assesses the feasibility of the proposed solutions. Finally, the main results of the performance of the three gate drivers, on an SiC MOSFET-based prototype are presented and compared.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: ERFD Structural Funds (FEDER); Spanish Government, Innovation Development and Research Office (MEC); USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1764460

Journal Information:: Electronics, Journal Name: Electronics Journal Issue: 2 Vol. 10; ISSN 2079-9292

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

References (61)

State of the art of high temperature power electronics Buttay, Cyril; Planson, Dominique; Allard, Bruno Materials Science and Engineering: B, Vol. 176, Issue 4 https://doi.org/10.1016/j.mseb.2010.10.003	journal	March 2011
Ultra‐fast MHz range driving circuit for SiC MOSFET using frequency multiplier with eGaN FET Kim, Taekyun; Jang, Minsoo; Agelidis, Vassilios G. IET Power Electronics, Vol. 9, Issue 10 https://doi.org/10.1049/iet-pel.2015.0491	journal	August 2016
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates Gaska, R.; Yang, J. W.; Osinsky, A. Applied Physics Letters, Vol. 72, Issue 6 https://doi.org/10.1063/1.120852	journal	February 1998
Semiconductors for high‐voltage, vertical channel field‐effect transistors Baliga, B. J. Journal of Applied Physics, Vol. 53, Issue 3, p. 1759-1764 https://doi.org/10.1063/1.331646	journal	March 1982
High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules Berning, David W.; Duong, Tam H.; Ortiz-Rodriguez, Jose M. 2008 IEEE Industry Applications Society Annual Meeting (IAS) https://doi.org/10.1109/08ias.2008.365	conference	October 2008
Design of Active SiC MOSFET Gate Driver for Crosstalk Suppression Considering Impedance Coordination between Gate Loop and Power Loop Lu, Zhebie; Li, Chengmin; Wu, Han 2019 IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC.2019.8721795	conference	March 2019
Benchmarking and Qualification of Gate Drivers for Medium Voltage (MV) Operation using 10 kV Silicon Carbide (SiC) MOSFETs Anurag, Anup; Acharya, Sayan; Gohil, Ghanshyamsinh 2019 IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC.2019.8721799	conference	March 2019
Active gate control for series connected SiC MOSFETs Lee, Inhwan; Yao, Xiu 2019 IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC.2019.8722292	conference	March 2019
Analysis and Mitigation of Common Mode Current in SiC MOSFET Gate Driver Power Supply Gill, Lee; Ikari, Takayuki 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) https://doi.org/10.1109/ESARS-ITEC.2018.8607397	conference	November 2018
Development of a 1 MHz MOSFET gate-driver for integrated converters de Rooij, M. A.; Strydom, J. T.; van Wyk, J. D. 2002 IEEE Industry Applications Society Annual Meeting, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) https://doi.org/10.1109/IAS.2002.1042817	conference	January 2002
Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devices Nguyen, Van-Sang; Le, Thanh-Long; Sarrafin, Farshid 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) https://doi.org/10.1109/ISPSD.2016.7520873	conference	June 2016
Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems Mantooth, H. Alan; Glover, Michael D.; Shepherd, Paul IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 2, Issue 3 https://doi.org/10.1109/JESTPE.2014.2313511	journal	September 2014
A Low Gate Turn-OFF Impedance Driver for Suppressing Crosstalk of SiC MOSFET Based on Different Discrete Packages Li, Yan; Liang, Mei; Chen, Jiangui IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 7, Issue 1 https://doi.org/10.1109/JESTPE.2018.2877968	journal	March 2019
Smart Self-Driving Multilevel Gate Driver for Fast Switching and Crosstalk Suppression of SiC MOSFETs Liu, Chunhui; Zhang, Zhengda; Liu, Yifu IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 8, Issue 1 https://doi.org/10.1109/JESTPE.2019.2947366	journal	March 2020
Power Semiconductor Devices for Smart Grid and Renewable Energy Systems Huang, Alex Q. Proceedings of the IEEE, Vol. 105, Issue 11 https://doi.org/10.1109/JPROC.2017.2687701	journal	November 2017
An Optimized Driver for SiC JFET-Based Switches Enabling Converter Operation With More Than 99% Efficiency Norling, Karl; Lindholm, Christian; Draxelmayr, Dieter IEEE Journal of Solid-State Circuits, Vol. 47, Issue 12 https://doi.org/10.1109/JSSC.2012.2225736	journal	December 2012
IEEE ITRW Working Group Position Paper-Packaging and Integration: Unlocking the Full Potential of Wide-Bandgap Devices Johnson, Mark; Wilson, Peter R.; Empringham, Lee IEEE Power Electronics Magazine, Vol. 5, Issue 2 https://doi.org/10.1109/MPEL.2018.2822246	journal	June 2018
Recent Advances in Gate Driver Integrated Circuits for Wide-Bandgap FETs: Manufacturers introduce gate drivers for squeezing the best performance out of WBG devices Bindra, Ashok IEEE Power Electronics Magazine, Vol. 6, Issue 3 https://doi.org/10.1109/MPEL.2019.2928062	journal	September 2019
Design, performance evaluation, fabrication and testing of a SiC MOSFET gate driver Kar, Abhishek; Ahmad, Syed Shahjahan; Narayanan, G. 2017 IEEE International Conference on Signal Processing, Informatics, Communication and Energy Systems (SPICES) https://doi.org/10.1109/SPICES.2017.8091311	conference	August 2017
High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs Anthony, Philip; McNeill, Neville; Holliday, Derrick IEEE Transactions on Industry Applications, Vol. 50, Issue 1 https://doi.org/10.1109/TIA.2013.2266311	journal	January 2014
Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng IEEE Transactions on Industry Applications, Vol. 54, Issue 2 https://doi.org/10.1109/TIA.2017.2777417	journal	March 2018
Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver Garcia, Jorge; Saeed, Sara; Gurpinar, Emre IEEE Transactions on Industry Applications, Vol. 55, Issue 4 https://doi.org/10.1109/TIA.2019.2910789	journal	July 2019
Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs Wang, Zhiqiang; Shi, Xiaojie; Xue, Yang IEEE Transactions on Industrial Electronics, Vol. 61, Issue 10 https://doi.org/10.1109/TIE.2013.2297304	journal	October 2014
New Resonant Gate Driver Circuit for High-Frequency Application of Silicon Carbide MOSFETs Chennu, Jaya Venkata Phani Sekhar; Maheshwari, Ramkrishan; Li, Helong IEEE Transactions on Industrial Electronics, Vol. 64, Issue 10 https://doi.org/10.1109/TIE.2017.2677307	journal	October 2017
A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory Camacho, Alejandro Paredes; Sala, Vicent; Ghorbani, Hamidreza IEEE Transactions on Industrial Electronics, Vol. 64, Issue 11 https://doi.org/10.1109/TIE.2017.2719603	journal	November 2017
An SiC-Based Half-Bridge Module With an Improved Hybrid Packaging Method for High Power Density Applications Chen, Cai; Chen, Yu; Li, Yuxiong IEEE Transactions on Industrial Electronics, Vol. 64, Issue 11 https://doi.org/10.1109/TIE.2017.2723873	journal	November 2017
A Magnetic Coupling Based Gate Driver for Crosstalk Suppression of SiC MOSFETs Zhang, Binfeng; Xie, Shaojun; Xu, Jinming IEEE Transactions on Industrial Electronics, Vol. 64, Issue 11 https://doi.org/10.1109/TIE.2017.2736500	journal	November 2017
Active Gate-Driver With dv/dt Controller for Dynamic Voltage Balancing in Series-Connected SiC MOSFETs Marzoughi, Alinaghi; Burgos, Rolando; Boroyevich, Dushan IEEE Transactions on Industrial Electronics, Vol. 66, Issue 4 https://doi.org/10.1109/TIE.2018.2842753	journal	April 2019
A High-Temperature SiC Three-Phase AC–DC Converter Design for >$100 ^{\circ}$C Ambient Temperature Wang, Ruxi; Boroyevich, Dushan; Ning, Puqi IEEE Transactions on Power Electronics, Vol. 28, Issue 1 https://doi.org/10.1109/TPEL.2012.2199131	journal	January 2013
Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration Zhang, Zheyu; Wang, Fred; Tolbert, Leon M. IEEE Transactions on Power Electronics, Vol. 29, Issue 4 https://doi.org/10.1109/TPEL.2013.2268058	journal	April 2014
A Survey of Wide Bandgap Power Semiconductor Devices Millan, Jose; Godignon, Philippe; Perpina, Xavier IEEE Transactions on Power Electronics, Vol. 29, Issue 5 https://doi.org/10.1109/TPEL.2013.2268900	journal	May 2014
A 4H Silicon Carbide Gate Buffer for Integrated Power Systems Ericson, Nance; Frank, Shane; Britton, Chuck IEEE Transactions on Power Electronics, Vol. 29, Issue 2 https://doi.org/10.1109/TPEL.2013.2271906	journal	February 2014
A SiC NMOS Linear Voltage Regulator for High-Temperature Applications Valle-Mayorga, Javier A.; Rahman, Ashfaqur; Mantooth, Homer Alan IEEE Transactions on Power Electronics, Vol. 29, Issue 5 https://doi.org/10.1109/TPEL.2013.2279251	journal	May 2014
A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver Wu, Xinke; Cheng, Shidong; Xiao, Qiang IEEE Transactions on Power Electronics, Vol. 29, Issue 5 https://doi.org/10.1109/TPEL.2013.2287382	journal	May 2014
A high temperature silicon carbide mosfet power module with integrated silicon-on-insulator-based gate drive Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M. IEEE Transactions on Power Electronics, Vol. 30, Issue 3 https://doi.org/10.1109/TPEL.2014.2321174	journal	March 2015
Optically Switched-Drive-Based Unified Independent dv/dt and di/dt Control for Turn-Off Transition of Power MOSFETs Riazmontazer, Hossein; Mazumder, Sudip K. IEEE Transactions on Power Electronics, Vol. 30, Issue 4 https://doi.org/10.1109/TPEL.2014.2327014	journal	April 2015
Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs Gurpinar, Emre; Castellazzi, Alberto IEEE Transactions on Power Electronics https://doi.org/10.1109/TPEL.2015.2506400	journal	January 2015
Gate and Base Drivers for Silicon Carbide Power Transistors: An Overview Peftitsis, Dimosthenis; Rabkowski, Jacek IEEE Transactions on Power Electronics https://doi.org/10.1109/TPEL.2015.2510425	journal	January 2015
Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred IEEE Transactions on Power Electronics, Vol. 32, Issue 12 https://doi.org/10.1109/TPEL.2017.2655496	journal	December 2017
A Gate Driver of SiC MOSFET for Suppressing the Negative Voltage Spikes in a Bridge Circuit Gao, Feng; Zhou, Qi; Wang, Panrui IEEE Transactions on Power Electronics, Vol. 33, Issue 3 https://doi.org/10.1109/TPEL.2017.2690938	journal	March 2018
A Dead-Time-Controlled Gate Driver Using Current-Sense FET Integrated in SiC MOSFET Niwa, Akimasa; Imazawa, Takanori; Kojima, Ryota IEEE Transactions on Power Electronics, Vol. 33, Issue 4 https://doi.org/10.1109/TPEL.2017.2704620	journal	April 2018
Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET Zeng, Zheng; Li, Xiaoling IEEE Transactions on Power Electronics, Vol. 33, Issue 10 https://doi.org/10.1109/TPEL.2017.2775665	journal	October 2018
A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules Yang, Yuan; Wen, Yang; Gao, Yong IEEE Transactions on Power Electronics, Vol. 34, Issue 8 https://doi.org/10.1109/TPEL.2018.2878779	journal	August 2019
High Off-State Impedance Gate Driver of SiC MOSFETs for Crosstalk Voltage Elimination Considering Common-Source Inductance Li, Chengmin; Lu, Zhebie; Chen, Ying IEEE Transactions on Power Electronics, Vol. 35, Issue 3 https://doi.org/10.1109/TPEL.2019.2932263	journal	March 2020
A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices Chen, Jian; Du, Xiong; Luo, Quanming IEEE Transactions on Power Electronics, Vol. 35, Issue 12 https://doi.org/10.1109/TPEL.2020.2995778	journal	December 2020
Fast SiC Switching Limits for Pulsed Power Applications Collier, Landon; Kajiwara, Taiga; Dickens, James IEEE Transactions on Plasma Science, Vol. 47, Issue 12 https://doi.org/10.1109/TPS.2019.2928535	journal	December 2019
An improved SiC MOSFET-gate driver integrated power module with ultra low stray inductances Zhang, Liqi; Liu, Pengkun; Huang, Alex Q. 2017 IEEE 5th Workshop on Wide-Bandgap Power Devices and Applications (WiPDA), 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) https://doi.org/10.1109/WiPDA.2017.8170570	conference	October 2017
Active gate driver for SiC MOSFET based PV inverter with enhanced operating range Acharya, Sayan; She, Xu; Tao, Fengfeng 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/apec.2018.8341565	conference	March 2018
Energy Efficient Wide Bandgap Devices Palmour, John 2006 IEEE Compound Semiconductor Integrated Circuit Symposium https://doi.org/10.1109/csics.2006.319904	conference	November 2006
Evaluation of SiC power devices for a high power density matrix converter Safari, Saeed; Castellazzi, Alberto; Wheeler, Pat 2012 IEEE Energy Conversion Congress and Exposition (ECCE) https://doi.org/10.1109/ecce.2012.6342297	conference	September 2012
Transformer isolated gate drive with protection for SiC MOSFET in high temperature application Qi, Feng; Xu, Longya; Zhao, Guoliang 2014 IEEE Energy Conversion Congress and Exposition (ECCE) https://doi.org/10.1109/ecce.2014.6954186	conference	September 2014
Self-supplied isolated gate driver for SiC power MOSFETs based on bi-level modulation scheme Garcia, Jorge; Gurpinar, Emre; Castellazi, Alberto 2017 IEEE Energy Conversion Congress and Exposition (ECCE) https://doi.org/10.1109/ecce.2017.8096859	conference	October 2017
A resonant galvanically separated power MOSFET/IGBT gate driver Bergh, T.; Karlsson, P.; Alakula, M. 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551) https://doi.org/10.1109/pesc.2004.1355355	conference	January 2004
Impulse transformer based secondary-side self-powered gate-driver for wide-range PWM operation of SiC power MOSFETs Garcia, Jorge; Gurpinar, Emre; Castellazzi, Alberto 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) https://doi.org/10.1109/wipda.2016.7799910	conference	November 2016
Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost Yamaguchi, Koji; Katsura, Kenshiro; Yamada, Tatsuro IEEJ Journal of Industry Applications, Vol. 7, Issue 3 https://doi.org/10.1541/ieejjia.7.218	journal	January 2018
Experimental Investigation on the Transient Switching Behavior of SiC MOSFETs Using a Stage-Wise Gate Driver Engelmann, Georges CPSS Transactions on Power Electronics and Applications, Vol. 3, Issue 1 https://doi.org/10.24295/CPSSTPEA.2018.00008	journal	March 2018
Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs Rothmund, Daniel; Bortis, Dominik; Kolar, Johann W. CPSS Transactions on Power Electronics and Applications, Vol. 3, Issue 4 https://doi.org/10.24295/CPSSTPEA.2018.00028	journal	December 2018
Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing Saadeh, Osama; Al-Hmoud, Ahmad; Dalala, Zakariya Electronics, Vol. 9, Issue 5 https://doi.org/10.3390/electronics9050703	journal	April 2020
A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs Chen, Jiangui; Li, Yan; Liang, Mei Energies, Vol. 12, Issue 9 https://doi.org/10.3390/en12091640	journal	April 2019
Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT Yin, Shan; Wu, Yingzhe; Liu, Yitao Energies, Vol. 12, Issue 23 https://doi.org/10.3390/en12234546	journal	November 2019
A MOSFET's Driver Applied to High-frequency Switching with Wide Range of Duty Cycles Zhang, Zhao; Xie, Shaojun Journal of Power Electronics, Vol. 15, Issue 5 https://doi.org/10.6113/JPE.2015.15.5.1402	journal	September 2015

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SiC MOSFET
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