Ultrafast Optomechanical Strain in Layered GeS

Luo, Duan; Zhang, Baiyu; Sie, Edbert J.; Nyby, Clara M.; Fan, Qingyuan; Shen, Xiaozhe; Reid, Alexander H.; Hoffmann, Matthias C.; Weathersby, Stephen; Wen, Jianguo; Qian, Xiaofeng; Wang, Xijie; Lindenberg, Aaron M.

doi:10.1021/acs.nanolett.2c05048

Ultrafast Optomechanical Strain in Layered GeS

Journal Article · Fri Mar 10 00:00:00 EST 2023 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.2c05048· OSTI ID:1991154

^[1]; Zhang, Baiyu ^[2]; Sie, Edbert J. ^[3]; Nyby, Clara M. ^[4]; Fan, Qingyuan ^[5]; Shen, Xiaozhe ^[6]; ^[6]; Hoffmann, Matthias C. ^[6]; Weathersby, Stephen ^[6]; ^[7]; Qian, Xiaofeng ^[2]; Wang, Xijie ^[6]; ^[5]

Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Chinese Academy of Sciences (CAS) (China); SLAC
Texas A & M Univ., College Station, TX (United States)
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Stanford Univ., CA (United States)
Stanford Univ., CA (United States)
Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)

Strong coupling between light and mechanical strain forms the foundation for next-generation optical micro- and nano-electromechanical systems. Such optomechanical responses in two-dimensional materials present novel types of functionalities arising from the weak van der Waals bond between atomic layers. In this paper, by using structure-sensitive megaelectronvolt ultrafast electron diffraction, we report the experimental observation of optically driven ultrafast in-plane strain in the layered group IV monochalcogenide germanium sulfide (GeS). Surprisingly, the photoinduced structural deformation exhibits strain amplitudes of order 0.1% with a 10 ps fast response time and a significant in-plane anisotropy between zigzag and armchair crystallographic directions. Rather than arising due to heating, experimental and theoretical investigations suggest deformation potentials caused by electronic density redistribution and converse piezoelectric effects generated by photoinduced electric fields are the dominant contributors to the observed dynamic anisotropic strains. Our observations define new avenues for ultrafast optomechanical control and strain engineering within functional devices.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC02-05CH11231; AC02-06CH11357; AC02-76SF00515

OSTI ID:: 1991154

Alternate ID(s):: OSTI ID: 2349301

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 6 Vol. 23; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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