Tuning Ultrafast Photoinduced Strain in Ferroelectric-Based Devices

Matzen, Sylvia; Guillemot, Loïc; Maroutian, Thomas; Patel, Sheena K.  K.; Wen, Haidan; DiChiara, Anthony D.; Agnus, Guillaume; Shpyrko, Oleg G.; Fullerton, Eric E.; Ravelosona, Dafiné; Lecoeur, Philippe; Kukreja, Roopali

doi:10.1002/aelm.201800709

Title: Tuning Ultrafast Photoinduced Strain in Ferroelectric-Based Devices

Journal Article · Thu May 02 00:00:00 EDT 2019 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201800709· OSTI ID:1526672

^[1]; Guillemot, Loïc ^[1]; Maroutian, Thomas ^[1]; Patel, Sheena K. K. ^[2]; Wen, Haidan ^[3]; DiChiara, Anthony D. ^[3]; Agnus, Guillaume ^[1]; Shpyrko, Oleg G. ^[2]; Fullerton, Eric E. ^[2]; Ravelosona, Dafiné ^[1]; Lecoeur, Philippe ^[1]; Kukreja, Roopali ^[4]

Univ. Paris-Sud, Palaiseau (France). Center for Nanoscience and Nanotechnology (C2N)
Univ. of California, San Diego, CA (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)
Univ. of California, Davis, CA (United States)

Abstract Ferroelectric materials exhibit coupled degrees of freedom and possess a switchable electric polarization coupled to strain, making them good piezoelectrics and enabling numerous devices including nonvolatile memories, actuators, and sensors. Moreover, novel photovoltaic effects are encountered through the interplay of electric polarization with the material optical properties. Consequently, light‐induced deformation in ferroelectrics, or photostriction, combining photovoltaic and converse piezoelectric effects, is under investigation in the quest for multifunctional materials. Using time‐resolved X‐ray diffraction, the first control of ultrafast photoinduced strain is demonstrated through in situ tuning of the polarization state in ferroelectric‐based devices. Both the magnitude and the sign of the photoinduced strain strongly depend on the transient photoinduced change of the internal electric field in the ferroelectric layer, and can be actively engineered to achieve two distinct remanent photostrictive responses. These results provide fundamental insight into light–matter interaction in ferroelectrics and exciting new avenues for materials functionality engineering.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); USDOE

Grant/Contract Number:: AC02-06CH11357; SC0012375; DMR‐1411335; DE‐SC0012375; DE‐AC02‐06CH11357

OSTI ID:: 1526672

Alternate ID(s):: OSTI ID: 1510342

Journal Information:: Advanced Electronic Materials, Vol. 5, Issue 6; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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References (25)

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36 MATERIALS SCIENCE
ferroelectrics
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