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Dynamical Nonlinear Inversion of the Surface Photovoltage at Si(100)

Journal Article · · Physical Review Letters
 [1];  [2];  [2];  [3];  [4];  [5];  [2];  [3]
  1. TU Bergakademie Freiberg (Germany). Center for Efficient High Temperature Processes and Materials Conversion (ZeHS)
  2. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
  3. Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany). Center for Free-Electron Laser Science
  4. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); European XFEL, Schenefeld (Germany)
  5. TU Bergakademie Freiberg (Germany)
+ Show Author Affiliations

A surface photovoltage (SPV) is observed whenever a doped semiconductor with non-negligible band bending is illuminated by light and charge carriers are excited across the band gap. The sign of the SPV depends on the nature of the doping, the amplitude of the SPV increases with the fluence of the light illumination up to a saturation value, which is determined by the doping concentration. We have investigated Si(100) samples with well-characterized doping levels over a wide range of illumination fluences. Surprisingly, the sign of the SPV upon illumination with 532 nm photons reverses for some p-doping concentrations at high fluences. This is a new effect associated with a crossover between electronic excitations in the bulk and at the surface of the semiconductor.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences & Biosciences Division (CSGB); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
2349068
Alternate ID(s):
OSTI ID: 2474101
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 14 Vol. 132; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

References (22)

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Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces journal June 2012
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Site-specific probing of charge transfer dynamics in organic photovoltaics journal March 2015
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Surface-state band structure of the Si(100)2×1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces journal July 1990
Ultrafast carrier dynamics inSi(111)7×7dangling bonds probed by time-resolved second-harmonic generation and two-photon photoemission journal June 2006
Improved quantitative description of Auger recombination in crystalline silicon journal October 2012
Surface space-charge dynamics and surface recombination on silicon (111) surfaces measured with combined laser and synchrotron radiation journal March 1990
Five-Wave-Mixing Spectroscopy of Ultrafast Electron Dynamics at a Si(001) Surface journal March 2004
Temperature and Intensity Dependence of the Limiting Efficiency of Silicon Solar Cells journal January 2021
SiO2/Si(001) studied by time-resolved valence band photoemission at MHz repetition rates: Linear and nonlinear excitation of surface photovoltage
  • Kamrla, Robin; Trützschler, Andreas; Huth, Michael
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 37, Issue 2 https://doi.org/10.1116/1.5082188
journal February 2019
Surface Photovoltage Analysis of Photoactive Materials journal February 2020

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Related Subjects

14 SOLAR ENERGY
photoinduced effect
surface states
synchrotron radiation facilities
ultrafast pump-probe spectroscopy
x-ray photoelectron spectroscopy