Simplified models of growth, defect formation, and thermal conductivity in diamond chemical vapor deposition

Technical Report · Sun Mar 31 23:00:00 EST 1996

DOI:https://doi.org/10.2172/233352· OSTI ID:233352

Coltrin, M E; Dandy, D S

A simplified surface reaction mechanism is presented for the CVD of diamond thin films. The mechanism also accounts for formation of point defects in the diamond lattice, an alternate, undesirable reaction pathway. Both methyl radicals and atomic C are considered as growth precursors. While not rigorous in all details, the mechanism is useful in describing the CVD diamond process over a wide range of reaction conditions. It should find utility in reactor modeling studies, for example in optimizing diamond growth rate while minimizing defect formation. This report also presents a simple model relating the diamond point-defect density to the thermal conductivity of the material.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 233352
• Report Number(s): SAND--96-0883; ON: DE96010374
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
DIAMONDS
POINT DEFECTS
THIN FILMS