Parametric instability of RF discharge with negative ions
Conference
·
OSTI ID:232838
- Novosibirsk Institute of Theoretical and Applied Mechanics (Russian Federation)
The radio-frequency (RF) discharge is widely used for etching and deposition of semiconductor films. Many gases used in technology are strongly electronegative (f.e. Cl{sub 2}, SF{sub 6}) and ratio of ion (p) and electron (n{sub e}) densities can be very high - up to 100-1000 times. For the typical values of ion density p{approximately}10{sup 11} the ion plasma frequency {var_pi}{sub p} can be close to discharge frequency {omega}{sub 0} = 2{pi}f{approximately}10{sup 8} s{sup -1}. So it is expected that ion-plasma-waves are excited. The intense ion oscillations near plasma-sheath boundary were observed in numerical modelling.
- OSTI ID:
- 232838
- Report Number(s):
- CONF-950749--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Equilibrium profiles for RF-plasma sources with ponderomotive forces
Negative ion kinetics in RF glow discharges
The Bohm criterion for rf discharges
Journal Article
·
Tue Aug 01 00:00:00 EDT 1995
· IEEE Transactions on Plasma Science
·
OSTI ID:118899
Negative ion kinetics in RF glow discharges
Journal Article
·
Mon Mar 31 23:00:00 EST 1986
· IEEE Trans. Plasma Sci.; (United States)
·
OSTI ID:5815728
The Bohm criterion for rf discharges
Journal Article
·
Thu Aug 01 00:00:00 EDT 1991
· Physics of Fluids B; (USA)
·
OSTI ID:5656027