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Andreev reflection of quantum Hall states through a quantum point contact

Journal Article · · Physical Review. B
 [1];  [2];  [1];  [1];  [1];  [3];  [1]
  1. New York Univ. (NYU), NY (United States)
  2. Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
  3. College of William and Mary, Williamsburg, VA (United States)

Here, we investigate the interplay between the quantum Hall (QH) effect and superconductivity in InAs surface quantum well (SQW)/NbTiN heterostructures using a quantum point contact (QPC). We use QPC to control the proximity of the edge states to the superconductor. By measuring the upstream and downstream resistances of the device, we investigate the efficiency of Andreev conversion at the InAs/NbTiN interface. Our experimental data is analyzed using the Landauer Büttiker formalism, generalized to allow for Andreev reflection processes. We show that by varying the voltage of the QPC, VQPC, the average Andreev reflection, A, at the QH-SC interface can be tuned from 50% to ~ 10%. The evolution of A with VQPC extracted from the measurements exhibits plateaus separated by regions for which A varies continuously with VQPC. The presence of plateaus suggests that for some ranges of VQPC the QPC might be pinching off almost completely from the QH-SC interface some of the edge modes. Our work shows a new experimental setup to control and advance the understanding of the complex interplay between superconductivity and QH effect in two-dimensional gas systems.

Research Organization:
Sandia National Laboratories (SNL-CA), Livermore, CA (United States); College of William and Mary, Williamsburg, VA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program; US Army Research Office (ARO); National Science Foundation (NSF)
Grant/Contract Number:
NA0003525; SC0022245
OSTI ID:
2326296
Alternate ID(s):
OSTI ID: 2439062
OSTI ID: 2473819
Report Number(s):
SAND--2024-03246J
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 3 Vol. 109; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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