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Induced Superconducting Pairing in Integer Quantum Hall Edge States

Journal Article · · Nano Letters

Indium arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor–superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work, we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. Further, we analyze the experimental data using the Landauer-Büttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); Defense Advanced Research Projects Agency (DARPA); US Department of the Navy, Office of Naval Research (ONR); US Army Research Office (ARO)
Grant/Contract Number:
NA0003525
OSTI ID:
1887415
Report Number(s):
SAND2022-12047J; 709641
Journal Information:
Nano Letters, Journal Name: Nano Letters Journal Issue: 15 Vol. 22; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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