Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance

Shi, Jiacheng; Arpaci, Sevdenur; Lopez‐Dominguez, Victor; Sangwan, Vinod K.; Mahfouzi, Farzad; Kim, Jinwoong; Athas, Jordan G.; Hamdi, Mohammad; Aygen, Can; Arava, Hanu; Phatak, Charudatta; Carpentieri, Mario; Jiang, Jidong S.; Grayson, Matthew A.; Kioussis, Nicholas; Finocchio, Giovanni; Hersam, Mark C.; Khalili Amiri, Pedram

doi:10.1002/adma.202312008

Title: Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance

Journal Article · Tue Mar 19 00:00:00 EDT 2024 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202312008· OSTI ID:2325090

Shi, Jiacheng ^[1]; Arpaci, Sevdenur ^[2]; Lopez‐Dominguez, Victor ^[3]; Sangwan, Vinod K. ^[4]; Mahfouzi, Farzad ^[5]; Kim, Jinwoong ^[5]; Athas, Jordan G. ^[1]; Hamdi, Mohammad ^[1]; Aygen, Can ^[1]; Arava, Hanu ^[6]; Phatak, Charudatta ^[6]; Carpentieri, Mario ^[7]; Jiang, Jidong S. ^[6]; Grayson, Matthew A. ^[2]; Kioussis, Nicholas ^[5]; Finocchio, Giovanni ^[8]; Hersam, Mark C. ^[9];

^[2]

Department of Electrical and Computer Engineering Northwestern University Evanston IL 60208 USA
Department of Electrical and Computer Engineering Northwestern University Evanston IL 60208 USA, Applied Physics Program Northwestern University Evanston IL 60208 USA
Department of Electrical and Computer Engineering Northwestern University Evanston IL 60208 USA, Institute of Advanced Materials (INAM) Universitat Jaume I Castellón 12006 Spain
Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA
Department of Physics and Astronomy California State University Northridge Northridge CA 91330 USA
Materials Science Division Argonne National Laboratory Lemont IL 60439 USA
Department of Electrical and Information Engineering Politecnico di Bari Bari 70125 Italy
Department of Mathematical and Computer Sciences Physical Sciences and Earth Sciences University of Messina Messina 98166 Italy
Department of Electrical and Computer Engineering Northwestern University Evanston IL 60208 USA, Applied Physics Program Northwestern University Evanston IL 60208 USA, Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA, Department of Chemistry Northwestern University Evanston IL 60208 USA

Abstract Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon‐based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon‐compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three‐terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn ₃ , sputter‐deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room‐temperature TMR effect. First‐principles calculations explain the TMR in terms of the momentum‐resolved spin‐dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

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Sponsoring Organization:: USDOE

OSTI ID:: 2325090

Journal Information:: Advanced Materials, Journal Name: Advanced Materials; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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