Ion implantation in compound semiconductors for high-performance electronic devices

Technical Report · Wed May 01 00:00:00 EDT 1996

DOI:https://doi.org/10.2172/231550· OSTI ID:231550

Zolper, J C; Baca, A G; Sherwin, M E; Klem, J F

Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 231550
• Report Number(s): SAND--96-0802C; CONF-960502--6; ON: DE96008169
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
CADMIUM
CRYSTAL DOPING
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
ION IMPLANTATION
PHOSPHORUS
ZINC