Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

McGlone, Joe F.; Ghadi, Hemant; Cornuelle, Evan; Armstrong, Andrew; Burns, George; Feng, Zixuan; Uddin Bhuiyan, A. F. M. Anhar; Zhao, Hongping; Arehart, Aaron R.; Ringel, Steven A.

doi:10.1063/5.0121416

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

Journal Article · Wed Jan 25 00:00:00 EST 2023 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0121416· OSTI ID:1971636

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The Ohio State Univ., Columbus, OH (United States); The Ohio State University
The Ohio State Univ., Columbus, OH (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga₂O₃ Schottky diodes is presented. It is found that after a 10.8 × 10¹³ cm^–2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm^–1. The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E_c-2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E_c-0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E_C-0.36, E_C-0.63, and E_C-1.09 eV were newly detected after proton irradiation, and two pre-existing states at E_C-1.2 and E_C-4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E_c-0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

View Accepted Manuscript (DOE)

Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Air Force Office of Scientific Research (AFOSR); Department of the Defense, Defense Threat Reduction Agency; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525; NA0003921

OSTI ID:: 1971636

Alternate ID(s):: OSTI ID: 2311671
OSTI ID: 1916513

Report Number(s):: SAND--2023-00299J

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 133; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (44)

Isothermal DLTS method using sampling time scanning Turchanikov, V. I.; Lysenko, V. S.; Gusev, V. A. physica status solidi (a), Vol. 95, Issue 1 https://doi.org/10.1002/pssa.2210950136	journal	May 1986
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga ₂ O ₃ Feng, Zixuan; Bhuiyan, A. F. M. Anhar Uddin; Xia, Zhanbo physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 8 https://doi.org/10.1002/pssr.202000145	journal	June 2020
Some electrical properties of the semiconductor βGa2O3 Lorenz, M. R.; Woods, J. F.; Gambino, R. J. Journal of Physics and Chemistry of Solids, Vol. 28, Issue 3 https://doi.org/10.1016/0022-3697(67)90305-8	journal	March 1967
On the bulk β-Ga2O3 single crystals grown by the Czochralski method Galazka, Zbigniew; Irmscher, Klaus; Uecker, Reinhard Journal of Crystal Growth, Vol. 404 https://doi.org/10.1016/j.jcrysgro.2014.07.021	journal	October 2014
SRIM – The stopping and range of ions in matter (2010) Ziegler, James F.; Ziegler, M. D.; Biersack, J. P. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091	journal	June 2010
Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals Ueda, Naoyuki; Hosono, Hideo; Waseda, Ryuta Applied Physics Letters, Vol. 70, Issue 26 https://doi.org/10.1063/1.119233	journal	June 1997
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors Lang, D. V. Journal of Applied Physics, Vol. 45, Issue 7 https://doi.org/10.1063/1.1663719	journal	July 1974
Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors Pässler, Roland Journal of Applied Physics, Vol. 96, Issue 1 https://doi.org/10.1063/1.1753076	journal	July 2004
A method to determine deep level profiles in highly compensated, wide band gap semiconductors Armstrong, A.; Arehart, A. R.; Ringel, S. A. Journal of Applied Physics, Vol. 97, Issue 8 https://doi.org/10.1063/1.1862321	journal	April 2005
Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping Víllora, Encarnación G.; Shimamura, Kiyoshi; Yoshikawa, Yukio Applied Physics Letters, Vol. 92, Issue 20 https://doi.org/10.1063/1.2919728	journal	May 2008
Gallium oxide (Ga ₂ O ₃ ) metal-semiconductor field-effect transistors on single-crystal β-Ga ₂ O ₃ (010) substrates Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito Applied Physics Letters, Vol. 100, Issue 1 https://doi.org/10.1063/1.3674287	journal	January 2012
Deep level defects throughout the bandgap of (010) β-Ga ₂ O ₃ detected by optically and thermally stimulated defect spectroscopy Zhang, Z.; Farzana, E.; Arehart, A. R. Applied Physics Letters, Vol. 108, Issue 5 https://doi.org/10.1063/1.4941429	journal	February 2016
Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures Zhang, Z.; Cardwell, D.; Sasikumar, A. Journal of Applied Physics, Vol. 119, Issue 16 https://doi.org/10.1063/1.4948298	journal	April 2016
Deep level defects in Ge-doped (010) β-Ga ₂ O ₃ layers grown by plasma-assisted molecular beam epitaxy Farzana, Esmat; Ahmadi, Elaheh; Speck, James S. Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5010608	journal	April 2018
Effect of 1.5 MeV electron irradiation on β-Ga₂O₃ carrier lifetime and diffusion length Lee, Jonathan; Flitsiyan, Elena; Chernyak, Leonid Applied Physics Letters, Vol. 112, Issue 8 https://doi.org/10.1063/1.5011971	journal	February 2018
Point defect induced degradation of electrical properties of Ga ₂ O ₃ by 10 MeV proton damage Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V. Applied Physics Letters, Vol. 112, Issue 3 https://doi.org/10.1063/1.5012993	journal	January 2018
Iron and intrinsic deep level states in Ga ₂ O ₃ Ingebrigtsen, M. E.; Varley, J. B.; Kuznetsov, A. Yu. Applied Physics Letters, Vol. 112, Issue 4 https://doi.org/10.1063/1.5020134	journal	January 2018
Structure and vibrational properties of the dominant O-H center in β-Ga ₂ O ₃ Weiser, Philip; Stavola, Michael; Fowler, W. Beall Applied Physics Letters, Vol. 112, Issue 23 https://doi.org/10.1063/1.5029921	journal	June 2018
Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga ₂ O ₃ Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V. Applied Physics Letters, Vol. 113, Issue 9 https://doi.org/10.1063/1.5049130	journal	August 2018
Impact of deep level defects induced by high energy neutron radiation in β-Ga ₂ O ₃ Farzana, Esmat; Chaiken, Max F.; Blue, Thomas E. APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5054606	journal	February 2019
Impact of proton irradiation on conductivity and deep level defects in β-Ga ₂ O ₃ Ingebrigtsen, M. E.; Kuznetsov, A. Yu.; Svensson, B. G. APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5054826	journal	February 2019
MOCVD homoepitaxy of Si-doped (010) β-Ga ₂ O ₃ thin films with superior transport properties Feng, Zixuan; Anhar Uddin Bhuiyan, A. F. M.; Karim, Md Rezaul Applied Physics Letters, Vol. 114, Issue 25 https://doi.org/10.1063/1.5109678	journal	June 2019
Identification of critical buffer traps in Si δ-doped β-Ga ₂ O ₃ MESFETs McGlone, Joe F.; Xia, Zhanbo; Joishi, Chandan Applied Physics Letters, Vol. 115, Issue 15 https://doi.org/10.1063/1.5118250	journal	October 2019
Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga ₂ O ₃ layers grown by plasma-assisted molecular beam epitaxy Farzana, Esmat; Mauze, Akhil; Varley, Joel B. APL Materials, Vol. 7, Issue 12 https://doi.org/10.1063/1.5126463	journal	December 2019
Full bandgap defect state characterization of β -Ga ₂ O ₃ grown by metal organic chemical vapor deposition Ghadi, Hemant; McGlone, Joe F.; Jackson, Christine M. APL Materials, Vol. 8, Issue 2 https://doi.org/10.1063/1.5142313	journal	February 2020
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga₂O₃ Ghadi, Hemant; McGlone, Joe F.; Feng, Zixuan Applied Physics Letters, Vol. 117, Issue 17 https://doi.org/10.1063/5.0025970	journal	October 2020
Split Ga vacancies in n -type and semi-insulating β-Ga ₂ O ₃ single crystals Karjalainen, A.; Makkonen, I.; Etula, J. Applied Physics Letters, Vol. 118, Issue 7 https://doi.org/10.1063/5.0033930	journal	February 2021
Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga₂O₃ Karjalainen, A.; Weiser, P. M.; Makkonen, I. Journal of Applied Physics, Vol. 129, Issue 16 https://doi.org/10.1063/5.0042518	journal	April 2021
A unified thermionic and thermionic-field emission (TE–TFE) model for ideal Schottky reverse-bias leakage current Li, W.; Jena, D.; Xing, H. G. Journal of Applied Physics, Vol. 131, Issue 1 https://doi.org/10.1063/5.0070668	journal	January 2022
Hydrogenated cation vacancies in semiconducting oxides Varley, J. B.; Peelaers, H.; Janotti, A. Journal of Physics: Condensed Matter, Vol. 23, Issue 33 https://doi.org/10.1088/0953-8984/23/33/334212	journal	August 2011
Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga ₂ O ₃ Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V. Journal of Physics D: Applied Physics, Vol. 53, Issue 27 https://doi.org/10.1088/1361-6463/ab83c4	journal	May 2020
Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3 Tippins, H. H. Physical Review, Vol. 140, Issue 1A https://doi.org/10.1103/PhysRev.140.A316	journal	October 1965
Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in β − G a 2 O 3 Deák, Peter; Duy Ho, Quoc; Seemann, Florian Physical Review B, Vol. 95, Issue 7 https://doi.org/10.1103/PhysRevB.95.075208	journal	February 2017
Multistability of isolated and hydrogenated Ga–O divacancies in β − Ga 2 O 3 Frodason, Y. K.; Zimmermann, C.; Verhoeven, E. F. Physical Review Materials, Vol. 5, Issue 2 https://doi.org/10.1103/PhysRevMaterials.5.025402	journal	February 2021
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β − Ga 2 O 3 Johnson, Jared M.; Chen, Zhen; Varley, Joel B. Physical Review X, Vol. 9, Issue 4 https://doi.org/10.1103/PhysRevX.9.041027	journal	November 2019
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs Green, Andrew J.; Chabak, Kelson D.; Heller, Eric R. IEEE Electron Device Letters, Vol. 37, Issue 7 https://doi.org/10.1109/LED.2016.2568139	journal	July 2016
Enhancement-Mode Ga ₂ O ₃ Vertical Transistors With Breakdown Voltage >1 kV Hu, Zongyang; Nomoto, Kazuki; Li, Wenshen IEEE Electron Device Letters, Vol. 39, Issue 6 https://doi.org/10.1109/LED.2018.2830184	journal	June 2018
Trapping Effects in Si -Doped -Ga ₂ O ₃ MESFETs on an Fe-Doped -Ga ₂ O ₃ Substrate Mcglone, Joe F.; Xia, Zhanbo; Zhang, Yuewei IEEE Electron Device Letters, Vol. 39, Issue 7 https://doi.org/10.1109/LED.2018.2843344	journal	July 2018
Radiation hardness of gallium nitride Ionascut-Nedelcescu, A.; Carlone, C.; Houdayer, A. IEEE Transactions on Nuclear Science, Vol. 49, Issue 6 https://doi.org/10.1109/TNS.2002.805363	journal	December 2002
Effect of 5 MeV proton irradiation damage on performance of β-Ga ₂ O ₃ photodetectors Ahn, Shihyun; Lin, Yi-Hsuan; Ren, Fan Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 34, Issue 4 https://doi.org/10.1116/1.4950872	journal	July 2016
1.5 MeV electron irradiation damage in β-Ga ₂ O ₃ vertical rectifiers Yang, Jiancheng; Ren, Fan; Pearton, Stephen J. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 35, Issue 3 https://doi.org/10.1116/1.4983377	journal	May 2017
10 MeV proton damage in β-Ga₂O₃ Schottky rectifiers Yang, Jiancheng; Chen, Zhiting; Ren, Fan Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 36, Issue 1 https://doi.org/10.1116/1.5013155	journal	January 2018
Growth of β-Ga ₂ O ₃ Single Crystals by the Edge-Defined, Film Fed Growth Method Aida, Hideo; Nishiguchi, Kengo; Takeda, Hidetoshi Japanese Journal of Applied Physics, Vol. 47, Issue 11 https://doi.org/10.1143/JJAP.47.8506	journal	November 2008
Low-pressure CVD-grown β-Ga ₂ O ₃ bevel-field-plated Schottky barrier diodes Joishi, Chandan; Rafique, Subrina; Xia, Zhanbo Applied Physics Express, Vol. 11, Issue 3 https://doi.org/10.7567/APEX.11.031101	journal	February 2018

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Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

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Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃