Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies

Massengale, Jeremy A.; Shen, Yixuan; Yang, Rui Q.; Hawkins, Samuel D.; Muhowski, Aaron J.

doi:10.1109/jqe.2023.3314098

Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies

Journal Article · Mon Sep 11 00:00:00 EDT 2023 · IEEE Journal of Quantum Electronics

DOI:https://doi.org/10.1109/jqe.2023.3314098· OSTI ID:2311348

^[1]; ^[2]; ^[2]; Hawkins, Samuel D. ^[3]; ^[3]

Univ. of Oklahoma, Norman, OK (United States); Naval Research Lab. (NRL), Washington, DC (United States)
Univ. of Oklahoma, Norman, OK (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, we report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages (V_th) as low as 3.62 V at 80 K. Consequently, much higher voltage efficiencies were observed, peaking at about 73% at 10.3 µm and allowing for large output powers of more than 100 mW/facet. Also, low threshold current densities (J_th) of 8.8 A/cm² in cw mode and 7.6 A/cm² in pulsed mode near 10 µm were observed; a result of adjustments in the GaInSb hole well composition intended to reduce the overall strain accumulation in the ICL. Furthermore, an ICL from the second wafer operating at a longer wavelength achieved a peak voltage efficiency of 57% at 11.7 µm, with a peak output power of more than 27 mW/facet. This ICL went on to lase beyond 12 µm in both cw and pulsed modes, representing a new milestone in long wavelength coverage for ICLs with the standard W-QW active region.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 2311348

Report Number(s):: SAND--2023-10575J

Journal Information:: IEEE Journal of Quantum Electronics, Journal Name: IEEE Journal of Quantum Electronics Journal Issue: 6 Vol. 59; ISSN 0018-9197

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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