Long wavelength interband cascade lasers

Massengale, J. A.; Shen, Yixuan; Yang, Rui Q.; Hawkins, Samuel D.; Klem, John F.

doi:10.1063/5.0084565

Long wavelength interband cascade lasers

Journal Article · Mon Feb 28 00:00:00 EST 2022 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0084565· OSTI ID:1855805

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Univ. of Oklahoma, Norman, OK (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

InAs-based interband cascade lasers (ICLs) can be more easily adapted toward long wavelength operation than their GaSb counterparts. Devices made from two recent ICL wafers with an advanced waveguide structure are reported, which demonstrate improved device performance in terms of reduced threshold current densities for ICLs near 11 μm or extended operating wavelength beyond 13 μm. Here, the ICLs near 11 μm yielded a significantly reduced continuous wave (cw) lasing threshold of 23 A/cm² at 80 K with substantially increased cw output power, compared with previously reported ICLs at similar wavelengths. ICLs made from the second wafer incorporated an innovative quantum well active region, comprised of InAsP layers, and lased in the pulsed-mode up to 120 K at 13.2 μm, which is the longest wavelength achieved for III–V interband lasers.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: NA0003525

OSTI ID:: 1855805

Report Number(s):: SAND2022-2599J; 703915

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 120; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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