Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide

Henry, M. David; Smith, Sean Weston; Fields, Shelby S.; Jaszewski, Samantha T.; Esteves, Giovanni; Heinrich, Helge; Ihlefeld, Jon F.

doi:10.1109/tuffc.2023.3311328

Title: Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide

Journal Article · Wed Sep 13 00:00:00 EDT 2023 · IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

DOI:https://doi.org/10.1109/tuffc.2023.3311328· OSTI ID:2311283

^[1];

^[2]; Fields, Shelby S. ^[3];

^[4]; Esteves, Giovanni ^[1]; Heinrich, Helge ^[4];

^[4]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Radiant Technologies, Albuquerque, NM (United States)
University of Virginia, Charlottesville, VA (United States); HRL Laboratories, Malibu, CA (United States)
University of Virginia, Charlottesville, VA (United States)

As ferroelectric hafnium zirconium oxide (HZO) becomes more widely utilized in ferroelectric microelectronics, integration impacts of intentional and non-intentional dielectric interfaces and their effects upon the ferroelectric film wake up and circuit parameters become important to understand. In this work, the effect of the addition of a linear dielectric aluminum oxide, Al₂O₃, below a ferroelectric Hf_0.58Zr_0.42O₂ film in a capacitor structure for FeRAM applications with NbN electrodes was measured. Depolarization fields resulting from the linear dielectric is observed to induce a reduction of the remanent polarization of the ferroelectric. Addition of the aluminum oxide also impacts the wake up of the HZO with respect to the cycling voltage applied. Intricately linked to the design of a FeRAM 1C/1T cell, the metal-ferroelectric-insulator-metal (MFIM) devices are observed to significantly shift charge related to the read states based on aluminum oxide thickness and wake up cycling voltage. As a result, a 33% reduction in the separation of read states is measured, which complicates how a memory cell is designed and illustrates the importance of clean interfaces in devices.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525; SC0021118

OSTI ID:: 2311283

Alternate ID(s):: OSTI ID: 2000501

Report Number(s):: SAND-2023-09992J

Journal Information:: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 71, Issue 2; ISSN 0885-3010

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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