Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

Journal Article · Mon Nov 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4829064· OSTI ID:22254140

Zhou, Dayu ^[1]; Xu, Jin ^[2]; Li, Qing; Guan, Yan ^[1]; Cao, Fei; Dong, Xianlin ^[3]; Müller, Johannes ^[4]; Schenk, Tony; Schröder, Uwe ^[5]

---

1. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China)
2. Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China)
3. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)
4. Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany)
5. Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)

Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO{sub 2} film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up.

• OSTI ID: 22254140
• Journal Information: Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
FERROELECTRIC MATERIALS
HAFNIUM OXIDES
THIN FILMS