Tailoring the Surface of Metal Halide Perovskites to Enable the Atomic Layer Deposition of Metal Oxide Contacts

Raiford, James A.; Chosy, Cullen; Reeves, Benjamin A.; Bent, Stacey F.

doi:10.1021/acsaem.1c01886

Tailoring the Surface of Metal Halide Perovskites to Enable the Atomic Layer Deposition of Metal Oxide Contacts

Journal Article · Wed Sep 08 00:00:00 EDT 2021 · ACS Applied Energy Materials

DOI:https://doi.org/10.1021/acsaem.1c01886· OSTI ID:2307830

^[1]; Chosy, Cullen ^[2]; Reeves, Benjamin A. ^[2]; ^[2]

Stanford University, CA (United States); Stanford University, Department of Chemical Engineering
Stanford University, CA (United States)

Replacing organic contact layers with inorganic counterparts, such as metal oxides, is one strategy for improving long-term device stability in metal halide perovskite solar cells. Often, the methods used to deposit metal oxide thin films are incompatible with metal halide perovskites, creating challenges for the fabrication of contacts above the perovskite absorber layer. In this study, we utilize a one-step, solution treatment of the top surface of Cs_0.25FA_0.75Pb(Br_0.20I_0.80)₃ to create a thin (~1 nm) overlayer of lead sulfide (PbS) to protect the underlying perovskite during subsequent deposition. X-ray characterization of the surface region shows that the PbS overlayer limits undesirable changes to the perovskite structure and stoichiometry during atomic layer deposition (ALD) of SnO₂. This protection enables ALD growth of SnO₂ electron contacts on top of the perovskite without an organic transport layer (e.g., C₆₀), resulting in a solar cell with a power conversion efficiency of 5.8%. This result is a marked improvement over devices with ALD SnO₂ grown directly on the perovskite without a PbS overlayer, which produce no power output. Furthermore, the interface characterization and device results in this study highlight some of the key challenges associated with ALD metal oxide growth on perovskite materials and can help inform the future design of inorganic contact layer deposition in solar photovoltaic technologies.

View Accepted Manuscript (DOE)

Research Organization:: Stanford University, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0008084

OSTI ID:: 2307830

Alternate ID(s):: OSTI ID: 1848673

Journal Information:: ACS Applied Energy Materials, Journal Name: ACS Applied Energy Materials Journal Issue: 9 Vol. 4; ISSN 2574-0962

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
atomic layer deposition
buffer layer
lead sulfide
metal oxide contacts
perovskite solar cells
photoluminescence
quasi-Fermi level splitting

Tailoring the Surface of Metal Halide Perovskites to Enable the Atomic Layer Deposition of Metal Oxide Contacts

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