Effect of the growth process on boron nitride thin films electrical properties
- Univ. of Houston, TX (United States); and others
Boron nitride thin films were grown on Si substrates using electron cyclotron resonance (ECR) plasma-ion beam (IBD), and neutral beam (NBD) assisted vapor depositions. The electrical properties of the BN films were investigated using Hall measurements. It was found that the films grown by NBD technique where p-type, those grown by ECR technique where n-type, whereas those grown by IBD where either n- to p-type depending on the ion energy. The composition of the films was investigated using EPMA, and it was found that most films were off-Stoichiometric (B/N <1 for ECR and B/N> 1 for NBD and IBD). The B/N ratio was higher for IBD BN films (up to 22 %). A model based on native defects centers (nitrogen vacancy and boron anti-site) is presented to account for the conductivity of the BN films.
- OSTI ID:
- 230168
- Report Number(s):
- CONF-950840-; CNN: Grant NAGW977; ARP-00365224; Grant 93761718; TRN: 96:000433-0170
- Resource Relation:
- Conference: International conference on applications of diamond films and related materials, Gaithersburg, MD (United States), 21-24 Aug 1995; Other Information: PBD: 1995; Related Information: Is Part Of Applications of diamond films and related materials: Third international conference; Feldman, A.; Yarbrough, W.A.; Murakawa, Masao; Tzeng, Yonhua; Yoshikawa, Masanori [eds.]; PB: 973 p.
- Country of Publication:
- United States
- Language:
- English
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