Plasma deposition of low dielectric constant (k=2.2{approx}2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films

Journal Article · Wed Dec 01 00:00:00 EST 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1808909· OSTI ID:20658110

Jun, Liu; Loh, K P; Ming, Lin; Foo, Y L; Wang, W D; Chi, D Z ^[1]

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1. Institute of Material Research and Engineering, Singapore, 3 Research Link, Singapore 117602 (Singapore)

The growth of low dielectric constant (k) Boron Nitride (BN) film on silicon as well as methylsilsesquioxane-based nanoporous films (LKD-5109) using plasma-discharged borazine was investigated. BN films were grown using microwave plasma (2.45 GHz) or radio-frequency (rf) atom beam deposition (13.56 MHz) on LKD-5109 in order to evaluate the compatibility of the two plasma processes with the physical integrity of the nanoporous films. Capacitance-voltage measurements were used to characterize the dielectric constants of the films on silicon and BN-integrated LKD (k{sub eff}{approx_equal}2.4). The composition and phases of the films were studied using cross-section transmission electron microscopy and electron-energy-loss spectroscopy. Although the microwave plasma process could produce BC{sub x}N films with a k value of 2.2, the process was not compatible with the nanoporous LKD substrate due to the ion-induced damage of the films. We found that only the rf atom beam deposition process, which was characterized by low-energy neutral fluxes, maintained the dielectric property of the BN-integrated LKD stack at an overall value of 2.4. In addition, the deposited BN films can act as an effective copper diffusion barrier on the LKD and can be lithographically processed to form trench patterns.

• OSTI ID: 20658110
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 11; Other Information: DOI: 10.1063/1.1808909; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
BORON NITRIDES
CAPACITANCE
CHEMICAL VAPOR DEPOSITION
COPPER
CROSS SECTIONS
DIELECTRIC MATERIALS
DIFFUSION BARRIERS
ELECTRIC POTENTIAL
ENERGY-LOSS SPECTROSCOPY
ION MICROPROBE ANALYSIS
MASS SPECTRA
NANOSTRUCTURES
PERMITTIVITY
PLASMA
POROUS MATERIALS
RADIOWAVE RADIATION
SILICON
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY