Deposition and characterization of DLC/SiO{sub 2} nanocomposite prepared by ion-assisted PECVD
Conference
·
OSTI ID:230144
- Drexel Univ., Philadelphia, PA (United States); and others
Various DLC-SiO{sub 2} nanocomposite films were deposited on silicon and quartz substrates maintained at 25 {degrees}C in a capacitively coupled, 13.56 MH{sub z} powered, asymmetric plasma reactor using styrene and tetraethoxysilane as the source gases, and hydrogen as a carrier gas. High deposition rate (14.3 ks) was achieved due to the 8 carbon atoms in styrene. The films have relatively low intrinsic stress, thus it was possible to deposit thicker films (5 {mu}m). The film`s Knoop microhardness and optical transparency in the visible region were comparable to those of DLC.
- OSTI ID:
- 230144
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
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