A new region for HFCVD diamond growth at low temperature
- Oak Ridge National Lab., TN (United States); and others
It has been found that the addition of a small amount of oxygen at the 10{sup 2} - 10{sup 3} ppm level to the mixture of CH{sub 4} and H{sub 2} permits diamond deposition at significantly lower substrate and filament temperatures compared to those in a conventional hot-filament assisted chemical vapor deposition (HFCVD) of diamond. Within a narrow region of feed gas composition, the operable substrate temperature can be extended to as low as 400{degrees}C, and filament temperature to 1350{degrees}C, where no significant amount of H and CH{sub 3} are expected to be produced by the filament. High quality diamond films have been deposited with reasonable growth rates at filament temperatures as low as 1600{degrees}C and substrate temperatures as low as 580{degrees}C. Power consumption is reduced. The filament is subjected to less distortion, and its lifetime is extended indefinitely.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 230082
- Report Number(s):
- CONF-950840--; CNN: Grant CTS-92-2575
- Country of Publication:
- United States
- Language:
- English
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