HFCVD of diamond at low substrate and low filament temperatures
- Oak Ridge National Lab., TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Chemistry
It has been discovered that the addition of a small amount of oxygen to the CH{sub 4} and H{sub 2} feed gas permits HFCVD of diamond at significantly lower filament and substrate temperatures. The effective O/C ratio here is much lower than that used in most studies of the oxygen effect. Careful control of the O/C and C/H ratios were found to be crucial to success. The effects of substrate and filament temperatures on growth rate and film quality were studied. Optimum conditions were found that gave reasonable growth rates ( {approximately}0.5 {mu}m/h ) with high film quality at filament temperatures below 1750{degrees}C and substrate temperatures below 600C. As a result, low temperature deposition has been realized. Power consumption can be reduced 50%, and the filament lifetime is extended indefinitely.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 204129
- Report Number(s):
- CONF-950840--5; ON: DE96004198
- Country of Publication:
- United States
- Language:
- English
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