Characterization of diamond nucleation enhancing layer formed during bias treatment on silicon
- Seoul National Univ. (Korea, Democratic People`s Republic of)
- Nanjing Univ. (China); and others
We treated four different Si (100) substrates with dc negative bias for 5, 10, 20 and 60 minutes each. Then, we deposited diamond films with uniform thickness of about 3-4.5 {mu}m onto four Si(100) substrates under the same growth condition. Bias-treated Si surfaces before the deposition of diamond films were analyzed using Raman spectroscopy, HRTEM and AES to investigate the nature of nucleation enhancing layer. The analysis showed that amorphous carbon layer was formed during bias treatment (SiC formation was not identified). We also analyzed bias-treated Si surfaces using conventional TEM. TEM images showed the clear overall procedure of amorphous carbon layer growth as biasing time increased.
- OSTI ID:
- 230067
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of pretreatment bias on the nucleation and growth mechanisms of ultrananocrystalline diamond films via bias-enhanced nucleation and growth: An approach to interfacial chemistry analysis via chemical bonding mapping
Characterization of bias-enhanced nucleation of diamond on silicon by invacuo surface analysis and transmission electron microscopy