Enhancement of responsivity and speed in waveguide Ge/Si avalanche photodiode with separate vertical Ge absorption, lateral Si charge and multiplication configuration

Journal Article · Mon Jul 15 04:00:00 EDT 2019 · Optical and Quantum Electronics

DOI:https://doi.org/10.1007/S11082-019-1926-5· OSTI ID:22950217

Li, Chong; Qin, Shihong; Li, Ben; Bao, Kai; Su, Jiale ^[1]

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1. Beijing University of Technology, School of Information (China)

Waveguide-coupled Ge/Si separate absorption, charge and multiplication avalanche photodiodes (SACM APDs) have shown significant potential as high-sensitivity, low-noise, and high-speed photo-detection for optical communications. Here we present a nanoscale single-mode waveguide-integrated vertical Ge absorption, lateral Si charge and single multiplication configuration for a waveguide Ge/Si SACM APD. This device can achieve 90% absorption at 1550 nm wavelengths with a 10 μm-long Ge layer. The device exhibits a seven times reduction in device length compared to conventional waveguide structures and a 29% increase compared to multi-mode interference coupling. Meanwhile, a 3-dB bandwidth can achieve 47 GHz, which is five times higher than the conventional vertical Ge absorption, lateral Si charge and multiplication devices.

• OSTI ID: 22950217
• Journal Information: Optical and Quantum Electronics, Journal Name: Optical and Quantum Electronics Journal Issue: 7 Vol. 51; ISSN OQELDI; ISSN 0306-8919
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
COMMUNICATIONS
CONFIGURATION
DETECTION
EQUIPMENT
GHZ RANGE
INTERFERENCE
LAYERS
NANOSTRUCTURES
NOISE
PHOTODIODES
SENSITIVITY
WAVEGUIDES
WAVELENGTHS