Enhancement of responsivity and speed in waveguide Ge/Si avalanche photodiode with separate vertical Ge absorption, lateral Si charge and multiplication configuration
- Beijing University of Technology, School of Information (China)
Waveguide-coupled Ge/Si separate absorption, charge and multiplication avalanche photodiodes (SACM APDs) have shown significant potential as high-sensitivity, low-noise, and high-speed photo-detection for optical communications. Here we present a nanoscale single-mode waveguide-integrated vertical Ge absorption, lateral Si charge and single multiplication configuration for a waveguide Ge/Si SACM APD. This device can achieve 90% absorption at 1550 nm wavelengths with a 10 μm-long Ge layer. The device exhibits a seven times reduction in device length compared to conventional waveguide structures and a 29% increase compared to multi-mode interference coupling. Meanwhile, a 3-dB bandwidth can achieve 47 GHz, which is five times higher than the conventional vertical Ge absorption, lateral Si charge and multiplication devices.
- OSTI ID:
- 22950217
- Journal Information:
- Optical and Quantum Electronics, Vol. 51, Issue 7; Other Information: Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 0306-8919
- Country of Publication:
- United States
- Language:
- English
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