Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions

Journal Article · Fri Nov 15 04:00:00 EST 2019 · Optical and Quantum Electronics

DOI:https://doi.org/10.1007/S11082-019-2079-2· OSTI ID:22950072

Yiğit Gezgin, Serap

In this work, ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes has been produced, CdS and CZTS thin film layers of the diode have been produced on ITO glass at room temperature using PLD technique. It has been produced CZTS thin films that have a polycrystalline structure that were annealed at the sulfurization temperatures of 325 °C, 350 °C and 375 °C when as-grown CZTS thin film has the amorphous structure. CdS thin films have been grown on substrate at room temperature in 15, 20 and 25 min that have polycrystalline structures. Then, CdS thin film deposited for 20 min was annealed at 200 °C temperature and, has better crystal structure compared to other thin films. Diodes have been composed of CZTS thin film annealed in 375 °C, CdS thin film was grown during 20 min and, then annealed at 200 °C temperature. According to J–V characteristics of diode, diodes exhibit some rectification behaviour in dark and show a photo-electric property under illumination conditions. In this article, the ideality factors of diodes in dark condition have been calculated, their electrical parameters of J{sub sc}, V{sub oc}, FF and η under the illumination condition have been determined and these electrical properties have been discussed in details.

• OSTI ID: 22950072
• Journal Information: Optical and Quantum Electronics, Journal Name: Optical and Quantum Electronics Journal Issue: 11 Vol. 51; ISSN OQELDI; ISSN 0306-8919
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
42 ENGINEERING
ANNEALING
CADMIUM
CADMIUM SULFIDES
CDZNTE SEMICONDUCTOR DETECTORS
EFFICIENCY
ELECTRICAL PROPERTIES
ENERGY BEAM DEPOSITION
HETEROJUNCTIONS
ILLUMINANCE
LASER RADIATION
PHOTOELECTRIC EFFECT
POLYCRYSTALS
SILVER
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS