Structural, Thermal and Luminescence Properties of AlN:Tm Thin Films Deposited on Silicon Substrate and Optical Fiber

Journal Article · Sat Dec 15 04:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618160182· OSTI ID:22945121

Alruwaili, Amani; Milinovic, Dunja ^[1]; Khan, Tahirzeb ^[2]; Ali, Ghafar ^[3]; Ahmad, Iftikhar ^[4]

---

1. Department of Physics & Astronomy, Ball State University (United States)
2. Department of Physics, Abdul Wali Khan University (Pakistan)
3. Physics Research Division, PINSTECH (Pakistan)
4. Abbottabad University of Science and Technology (Pakistan)

Thin films of AlN:Tm are deposited on a Si(111) and Si(100) substrates and optical fiber by rf magnetron sputtering method. 200–400 nm thick films are deposited at various temperatures to observe the effect of temperature on their structure and morphology. Liquid nitrogen is used to deposit films at low temperature of –196°C. An electric heater is used to grow films at 250–700°C range. The deposited films are analyzed for their structure and thermal stability using X-ray diffraction and thermogravimetric analysis. Films deposited at liquid nitrogen temperature are amorphous and those deposited at high temperature are crystalline. Average grain size, strain and interatomic distance of the crystalline films are calculated. The grain size and inter-atomic distance increase from 36.54 to 45.12 nm and from 0.2368 to 0.25 nm respectively. Photoluminescence of the films excited by 783 nm crystal laser shows an intense infrared emission from Tm{sup +3} at 802 nm as a result of {sup 3}H{sub 4} → {sup 3}H{sub 6} transition.

• OSTI ID: 22945121
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 16 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
CRYOGENIC FLUIDS
CRYSTALS
DEPOSITS
GRAIN SIZE
HEATERS
INTERATOMIC DISTANCES
LASERS
MAGNETRONS
MORPHOLOGY
NITROGEN
OPTICAL FIBERS
PHOTOLUMINESCENCE
SILICON
SPUTTERING
TEMPERATURE RANGE 0400-1000 K
THERMAL GRAVIMETRIC ANALYSIS
THIN FILMS
X-RAY DIFFRACTION