Studies on VO{sub x} thin films deposited over Si{sub 3}N{sub 4} coated Si substrates

Journal Article · Wed Jun 24 04:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4917911· OSTI ID:22490389

Raj, P. Deepak; Gupta, Sudha ^[1]

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1. Solid State Physics Laboratory, New Delhi – 110 054 (India)

Vanadium oxide (VO{sub x}) thin films were deposited on to the silicon nitride (Si{sub 3}N{sub 4}) coated silicon (Si) substrate using reactive direct current magnetron sputtering at different substrate temperatures (T{sub s}). The deposited films were characterized for their structural, morphological, optical and electrical properties. The average grain size of the deposited films was in the range of 95 to 178 nm and the strain varied from 0.071 to 0.054 %. The optical bandgap values of the films were evaluated using UV-Vis spectroscopy and lies in the range of 2.46 to 3.88 eV. The temperature coefficient of resistance (TCR) for the film deposited at 125 °C was -1.23%/°C with the sheet resistivity of 2.7 Ω.cm.

• OSTI ID: 22490389
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1665; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
DIRECT CURRENT
ELECTRIC CONDUCTIVITY
ENERGY GAP
EV RANGE
GRAIN SIZE
SILICON
SILICON NITRIDES
SPUTTERING
STRAINS
SUBSTRATES
TEMPERATURE COEFFICIENT
TEMPERATURE DEPENDENCE
THIN FILMS
ULTRAVIOLET SPECTRA
VANADIUM OXIDES
VISIBLE SPECTRA