Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching

Journal Article · Sat Dec 15 00:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S106378261816008X· OSTI ID:22945107

Bolshakov, A. D.; Dvoretckaia, L. N.; Sapunov, G. A. ^[1]; Kirilenko, D. A. ^[2]; Mozharov, A. M.; Shugurov, K. Yu.; Shkoldin, V. A.; Cirlin, G. E.; Mukhin, I. S. ^[1]

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1. St. Petersburg Academic University (Russian Federation)
2. ITMO University (Russian Federation)

Self-catalyzed GaP nanowire and GaP/GaPAs nanowire heterostructures have been grown on Si(111) by solid-source molecular beam epitaxy. Formation of wurtzite polytype segments with thicknesses varying from the several tens up to the 500 nm depending on the growth condition has been observed. Effect of the V/III flux ratio on the growth mechanism, nanowire structure and morphology was studied by means of scanning electron microscopy and high resolution transmission electron microscopy.

• OSTI ID: 22945107
• Journal Information: Semiconductors, Vol. 52, Issue 16; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTALS
GALLIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOWIRES
SCANNING ELECTRON MICROSCOPY
SILICON
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY