InGaN/GaN QDs Nanorods: Processing and Properties

Journal Article · Fri Dec 14 23:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618160145· OSTI ID:22945106

Soshnikov, I. P.; Morozov, I. A.; Berezovskaya, T. N.; Kryzhanovskaya, N. V.; Kudryashov, D. A.; Lysak, V. V. ^[1]

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1. St. Petersburg Academic University (Russian Federation)

InGaN/GaN nanorod structure is presented for the fabrication of light-emitting diodes by means of plasma-chemical etching. Processes of the etching of nanorods and the defect passivation in a planar InGaN/GaN quantum dot heterostructure are studied. The obtained results allow creating the light-emitting diode nanostructure with a greater efficiency compared to the classical planar technology.

• OSTI ID: 22945106
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 16 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
DEFECTS
ETCHING
FABRICATION
GALLIUM NITRIDES
INDIUM NITRIDES
LIGHT EMITTING DIODES
PASSIVATION
PLASMA
PROCESSING
QUANTUM DOTS