Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

Journal Article · Sun Dec 04 23:00:00 EST 2011 · Optics Express

DOI:https://doi.org/10.1364/OE.19.025528· OSTI ID:1065816

Li, Qiming ^[1]; Westlake, Karl R. ^[1]; Crawford, Mary H. ^[1]; Lee, Stephen R. ^[1]; Koleske, Daniel D. ^[1]; Figiel, Jeffery J. ^[1]; Cross, Karen C. ^[1]; Fathololoumi, Saeed ^[2]; Mi, Zetian ^[2]; Wang, George T. ^[1]

---

1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Physical, Chemical, & Nano Sciences Center
2. McGill Univ., Montreal, QC (Canada). Dept. of Electrical and Computer Engineering

Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique consisting of a plasma etch followed by an anisotropic wet etch. The wet etch results in straight, smooth, well-faceted nanorods with controllable diameters and removes the plasma etch damage. 94% of the nanorod LEDs are dislocation-free and a reduced quantum confined Stark effect is observed due to reduced piezoelectric fields. Despite these advantages, the IQE of the nanorod LEDs measured by photoluminescence is comparable to the planar LED, perhaps due to inefficient thermal transport and enhanced nonradiative surface recombination.

• Research Organization: Energy Frontier Research Centers (EFRC); EFRC for Solid State Lighting Science (SSLS)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1065816
• Journal Information: Optics Express, Journal Name: Optics Express Journal Issue: 25 Vol. 19; ISSN OPEXFF; ISSN 1094-4087
• Publisher: Optical Society of America (OSA)
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
77 NANOSCIENCE AND NANOTECHNOLOGY
solar (photovoltaic)
solid state lighting
phonons
materials and chemistry by design
optics
synthesis (novel materials)