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Title: Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands

Journal Article · · Semiconductors (Woodbury, N.Y., Print)
; ; ;  [1]; ; ;  [2]
  1. Rzhanov Institute of Semiconductor Physics SB RAS (Russian Federation)
  2. Scientific and Practical Materials Research Centre, NAS Belarus (Belarus)

Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.

OSTI ID:
22945096
Journal Information:
Semiconductors (Woodbury, N.Y., Print), Vol. 52, Issue 16; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English