Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses
- Saint Petersburg Electrotechnical University LETI (Russian Federation)
- Herzen State Pedagogical University of Russia (Russian Federation)
The formation of antisite defects in Ge{sub 20}Te{sub 80} and Ge{sub 15}As{sub 4}Te{sub 81} vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the {sup 119mm}Sn({sup 119m}Sn), {sup 119m}Te({sup 119m}Sn), {sup 125}Sn({sup 125}Te), and {sup 125m}Te({sup 125}Te) isotopes. It is shown that the isovalent substitution of germanium atoms by tin atoms does not vary the symmetry of the local surrounding of germanium sites, while tin and tellurium atoms reconstruct their local surrounding in sites unnatural for them.
- OSTI ID:
- 22945004
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 53; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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